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PDF ZXTN25100DZ Data sheet ( Hoja de datos )

Número de pieza ZXTN25100DZ
Descripción 100V NPN high gain transistor
Fabricantes Zetex Semiconductors 
Logotipo Zetex Semiconductors Logotipo



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ZXTN25100DZ
100V NPN high gain transistor in SOT89
Summary
BVCEX > 180V
BVCEO > 100V
BVECO > 6V
IC(cont) = 2.5A
VCE(sat) < 100mV @ 1A
RCE(sat) = 80m
PD = 2.4W
Complementary part number ZXTP25100CZ
Description
Packaged in the SOT89 outline this new low saturation NPN transistor
offers extremely low on state losses making it ideal for use in DC-DC
circuits and various driving and power management functions.
Features
• High power dissipation SOT89 package
• High gain
• Low saturation voltage
• 180V forward blocking voltage
• 6V reverse blocking voltage
B
C
E
Applications
• PSU start up switch
• DC - DC converters
• Motor drive
• Relay, lamp and solenoid drive
Ordering information
Device
ZXTN25100DZTA
Reel size
(inches)
7
Tape width
(mm)
12
Quantity
per reel
1000
E
CC
B
Pinout - top view
Device marking
1K9
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com

1 page




ZXTN25100DZ pdf
ZXTN25100DZ
Electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Collector-Base breakdown
voltage
Collector-Emitter
breakdown voltage
(forward blocking)
Collector-Emitter
breakdown voltage
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Collector
breakdown voltage
(reverse blocking)
Emitter-Base breakdown
voltage
Collector-Base cut-off
current
Symbol
BVCBO
BVCEX
BVCEO
BVECX
BVECO
BVEBO
ICBO
Collector-Emitter cut-off ICEX
current
Emitter cut-off current
Collector-Emitter
saturation voltage
IEBO
VCE(sat)
Min.
180
180
100
6
6
7
Base-Emitter saturation
voltage
Base-Emitter turn-on
voltage
Static forward current
transfer ratio
VBE(sat)
VBE(on)
hFE
300
120
40
Transition frequency
Input capacitance
Output capacitance
Delay time
Rise time
Storage time
Fall time
fT
Cibo
Cobo
td
tr
ts
tf
Typ.
220
220
130
8.2
8.7
Max.
Unit Conditions
V IC = 100μA
V IC = 100μA, RBE < 1kΩ or
-1V > VBE > 0.25V
V IC = 10mA (*)
V IE = 100μA, RBC < 1kΩ or
0.25V > VBC > -0.25V
V IE = 100μA
8.3
<1
<1
120
80
220
935
890
450
170
60
20
175
154
8.7
16.4
115
763
158
V IE = 100μA
50
0.5
100
50
170
100
345
1000
950
nA VCB = 180V
μA VCB =180V,Tamb=100°C
nA VCE = 100V, RBE < 1kΩ or
-1V < VBE < 0.25V
nA VEB = 5.6V
mV IC = 0.5A, IB = 10mA(*)
mV IC = 1A, IB = 100mA(*)
mV IC = 2.5A, IB = 250mA(*)
mV IC = 2.5A, IB = 250mA(*)
mV IC = 2.5A, VCE = 2V(*)
900 IC = 10mA, VCE = 2V(*)
IC = 0.5A, VCE = 2V(*)
IC = 1A, VCE = 2V(*)
IC = 2.5A, VCE = 2V(*)
MHz IC = 50mA, VCE = 10V
f = 100MHz
250 pF VEB = 0.5V, f = 1MHz(*)
15 pF VCB = 10V, f = 1MHz(*)
ns
ns IC = 500mA, VCC = 10V,
ns IB1 = -IB2 = 50mA
ns
NOTES:
(*)Measured under pulsed conditions. Pulse width 300μs; duty cycle 2%.
Issue 1 - December 2007
© Zetex Semiconductors plc 2007
5
www.zetex.com

5 Page










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