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PDF 2N4922G Data sheet ( Hoja de datos )
| Número de pieza | 2N4922G | |
| Descripción | Medium-Power Plastic NPN Silicon Transistors | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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2N4921G, 2N4922G,
2N4923G
Medium-Power Plastic
NPN Silicon Transistors
These high−performance plastic devices are designed for driver
circuits, switching, and amplifier applications.
Features
• Low Saturation Voltage
• Excellent Power Dissipation Due to Thermopadt Construction
• Excellent Safe Operating Area
• Complement to PNP 2N4920G
• These Devices are Pb−Free and are RoHS Compliant**
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCEO
40
60
80
Vdc
Collector−Emitter Voltage
2N4921G
2N4922G
2N4923G
VCB Vdc
40
60
80
Emitter Base Voltage
Collector Current − Continuous (Note 1)
Collector Current − Peak (Note 1)
Base Current − Continuous
Total Power Dissipation
@ TC = 25_C
Derate above 25_C
VEB
IC
ICM
IB
PD
5.0 Vdc
1.0 Adc
3.0 Adc
1.0 Adc
30 W
0.24 mW/_C
Operating and Storage Junction
Temperature Range
TJ, Tstg –65 to +150 _C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The 1.0 A maximum IC value is based upon JEDEC current gain requirements.
The 3.0 A maximum value is based upon actual current handling capability of
the device (see Figures 5 and 6).
THERMAL CHARACTERISTICS (Note 2)
Characteristic
Symbol Max
Unit
Thermal Resistance, Junction−to−Case RqJC
4.16
_C/W
2. Recommend use of thermal compound for lowest thermal resistance.
*Indicates JEDEC Registered Data.
** For additional information on our Pb−Free strategy and soldering details,
please download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 14
1
http://onsemi.com
1.0 AMPERE
GENERAL PURPOSE
POWER TRANSISTORS
40−80 VOLTS, 30 WATTS
COLLECTOR
2, 4
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
123
MARKING DIAGRAM
YWW
2
N492xG
Y = Year
WW = Work Week
2N492x = Device Code
x = 1, 2, or 3
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
2N4921G
TO−225
(Pb−Free)
500 Units / Box
2N4922G
TO−225
(Pb−Free)
500 Units / Box
2N4923G
TO−225
(Pb−Free)
500 Units / Box
Publication Order Number:
2N4921/D
1 page  
2N4921G, 2N4922G, 2N4923G
1000
700
500
300
200 TJ = 150°C
VCE = 1.0 V
100 25°C
70
50 - 55°C
30
20
10
2.0 3.0 5.0
10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain
1.0
0.8 IC = 0.1 A 0.25 A 0.5 A 1.0 A
0.6
TJ = 25°C
0.4
0.2
0
0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IB, BASE CURRENT (mA)
Figure 9. Collector Saturation Region
200
108
107
IC = 2 x ICES
106
IC ≈ ICES
105
IC = 10 x ICES
VCE = 30 V
ICES VALUES
104 OBTAINED FROM
FIGURE 12
103
0
30
60 90 120 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 10. Effects of Base−Emitter Resistance
1.5
TJ = 25°C
1.2
0.9
VBE(sat) @ IC/IB = 10
0.6
VBE @ VCE = 2.0 V
0.3
VCE(sat) @ IC/IB = 10
0
2.0 3.0 5.0 10 20 30 50
100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 11. “On” Voltage
104
103 TJ = 150°C
102 100°C
25°C
101
IC = ICES
100 VCE = 30 V
10-1
REVERSE
10- 2
- 0.2 - 0.1 0
FORWARD
+ 0.1 + 0.2 + 0.3 + 0.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 12. Collector Cut−Off Region
+ 0.5
+ 2.5
+ 2.0
+ 1.5
hFE @ VCE + 1.0 V
*APPLIES FOR IC/IB ≤
2
+ 1.0 TJ = 100°C to 150°C
+ 0.5 *qVC FOR VCE(sat)
0 - 55°C to +100°C
- 0.5
- 1.0
- 1.5
- 2.0 qVB FOR VBE
- 2.5
2.0 3.0 5.0 10 20 30 50 100 200 300 500 1000 2000
IC, COLLECTOR CURRENT (mA)
Figure 13. Temperature Coefficients
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| PDF Descargar | [ Datasheet 2N4922G.PDF ] | |
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