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PDF RSX201VAM30 Data sheet ( Hoja de datos )
| Número de pieza | RSX201VAM30 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Schottky Barrier Diode
RSX201VAM30
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
0.17±0.04
0.6±0.1
lLand Size Figure (Unit : mm)
1.1
(1)
lFeatures
1) Small mold type (TUMD2M)
2) High reliability
3) Low VF and low IR
0～0.1
(2)
ROHM : TUMD2M
Manufacture date and factory
TUMD2M
lStructure (1)Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
2.0±0.05
4.0±0.1
4.0±0.1
Φ
1.5
+0.1
-0
(2) Anode
0.25±0.05
1.53±0.03
Φ
+0.2
1.0 -0
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
30 V
Reverse Voltage
Average Forward Rectified Current
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Operating Junction Temperature
VR
Io
Io
IFSM
Tj
Direct Reverse Voltage
Alumina board mounted, 60Hz half sin Wave,
resistive load, Tc=105°C Max.
Glass epoxy board mounted, 60Hz half sin Wave,
resistive load, Tc=90°C Max.
60Hz half sin wave,
Non-repetitive at Ta=25°C, 1cycle
-
30
1.5
1.0
8
125
V
A
A
A
°C
Storage Temperature
Tstg
- -40 to +125 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Forward Voltage
VF1 IF=1.0A - 0.36 0.42 V
VF2 IF=1.5A - 0.40 0.46 V
Reverse Current
IR1 VR=5V - 15 60 mA
IR2 VR=30V - 70 300 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
1 page  
RSX201VAM30
lElectrical Characteristic Curves
Data Sheet
1000
Rth(j-a)
100
10
Rth(j-c)
Glass epoxy board mounted
IM=100mA
IF=1A
time
1
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
3
2 DC
1
IO
0A
0V
VR t
T D=t/T
VR=VRM/2
Tj=125°C
Glass epoxy board mounted
Sin(θ=180)
D = 1/2
0
0 25 50 75 100 125
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
3
2 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=125°C
Glass epoxy board mounted
D = 1/2
1
Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No destruction at 30kV
25
20
15 AVE. : 11.4kV
10
5
0 C=200pF
R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RSX201VAM30.PDF ] | |
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