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PDF RF5355 Data sheet ( Hoja de datos )

Número de pieza RF5355
Descripción 5GHz LINEAR POWER AMPLIFIER
Fabricantes RF Micro Devices 
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RF5355
3.3V, 5GHz LINEAR POWER AMPLIFIER
Package Style: QFN, 8-Pin, 2.2mmx2.2mmx0.45mm
Features
Single Supply Voltage 3.0V to
5.0 V
No external matching compo-
nents
28dB Typical Gain Across
Band
POUT=17dBm@<4% TYP
EVM across Operating Band
4900MHz to 5850MHz Fre-
quency Range
Applications
IEEE802.11a/n and
IEEE802.16e Applications
HyperLAN
WiFi Systems
Commercial and Consumer
Systems
Portable Battery-Powered
Equipment
Spread-Spectrum and MMDS
Systems
VC1 1
8
7
6 RF OUT
Input
Match
Interstage
Match
Interstage
Match
Output
Match
RF IN 2
Bias
3
5 RF OUT
4
Functional Block Diagram
Product Description
The RF5355 is a linear, medium-power, high-efficiency power amplifier IC
designed specifically for battery-powered WiFi applications such as PC
cards, mini PCI, and compact flash applications. It is also designed to
meet IEEE802.11a, IEEE802.11n, IEEE802.16e (4.9GHz to 5.850GHz
only) WiMax, FCC, and ETSI requirements for operation in the 4.9GHz to
5.850GHz band. The device is manufactured on an advanced InGap GaAs
Heterojunction Bipolar Transistor process, and has been designed for use
as the final RF amplifier in 5GHz WiFi and other spread-spectrum trans-
mitters. The device is provided in a QFN, 8-pin, 2.2mmx2.2mmx0.45mm,
leadless chip carrier with backside ground. The RF5355 operates from a
single supply and will be easily incorporated into WiFi and other designs
with minimal external components.
Ordering Information
RF5355
RF5355SR
RF5355TR7
RF5355PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel
Fully Assembled Evaluation Board and 5 loose sample pieces.
DS110618
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5355 pdf
INDEX
AREA
2.20
Package Drawing
QFN, 8-Pin, 2.2x2.2x0.45mm
2 PLCS
0.10 C
0.10 C
2 PLCS
0.50
0.40
0.152
REF
-B-
-A-
2.20
0.65
0.05
0.00
SEATING
PLANE
-C-
0.10
MAX
11..2000TYP
Dimensions in mm.
Shaded lead is pin 1.
0.31
0.21
0.28
0.18
0.10 M C A B
RF5355
DS110618
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 11

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RF5355 arduino
RF5355
EVM versus Output Power
10 VCC=3.3V; VREG=2.85V; Temp=25°C
9
4900 (MHz)
5100 (MHz)
8
5400 (MHz)
5850 (MHz)
7
6
5
4
3
2
1
0
0 2 4 6 8 10 12 14 16 18 20
Output Power (dBm)
200
180
160
140
120
100
80
60
40
20
0
0
ICC versus Output Power
VCC=3.3V; VREG=2.85V; Temp=25°C
4900 (MHz)
5100 (MHz)
5400 (MHz)
5850 (MHz)
5 10 15
Output Power (dBm)
20
10.0
9.5
9.0
8.5
8.0
7.5
7.0
6.5
6.0
5.5
5.0
0
IREG versus Output Power
VCC=3.3V; VREG= 2.85V; Temp=25°C
4900 (MHz)
5100 (MHz)
5400 (MHz)
5850 (MHz)
2 4 6 8 10 12 14 16 18 20
Output Power (dBm)
Gain versus Output Power
35 VCC=3.3V; VREG=2.85V; Temp=25°C
33
31
29
27
25
23
21
19
4900 (MHz)
5100 (MHz)
17
5400 (MHz)
5850 (MHz)
15
0 5 10 15 20
Output Power (dBm)
Power Detector versus Output Power
3.0 VCC=3.3V; VREG=2.85V; Temp=25°C
2.5
2.0
1.5
1.0
4900 (MHz)
0.5 5100 (MHz)
5400 (MHz)
5850 (MHz)
0.0
0 2 4 6 8 10 12 14 16 18 20
Output Power (dBm)
DS110618
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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