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PDF BF5020W Data sheet ( Hoja de datos )

Número de pieza BF5020W
Descripción Silicon N-Channel MOSFET Tetrode
Fabricantes Infineon 
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No Preview Available ! BF5020W Hoja de datos, Descripción, Manual

Silicon N-Channel MOSFET Tetrode
Low noise gain controlled input stages of UHF- and
VHF - tuners with 3 V up to 5 V supply voltage
Integrated gate protection diodes
Excellent noise figure
High gain, high forward transadmittance
Improved cross modulation at gain reduction
Pb-free (RoHS compliant) package
Qualified according AEC Q101
BF5020...
3
4
2
1
AGC G2
HF G1
Input
RG1
VGG
Drain
GND
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Package
Pin Configuration
BF5020
SOT143 1 = S 2 = D 3 = G2 4 = G1 -
-
BF5020R
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -
-
BF5020W
SOT343 1 = D 2 = S 3 = G1 4 = G2 -
-
Maximum Ratings
Parameter
Drain-source voltage
Continuous drain current
Gate 1/ gate 2-source current
Gate 1/ gate 2-source voltage
Total power dissipation
TS 76 °C, BF5020, BF5020R
TS 94 °C, BF5020W
Storage temperature
Channel temperature
Symbol
VDS
ID
IG1S, IG2S
VG1S, VG2S
Ptot
Tstg
Tch
Value
8
25
± 10
±6
200
200
-55 ... 150
150
HF Output
+ DC
EHA07461
Marking
KYs
KYs
KYs
Unit
V
mA
mA
V
mW
°C
1 2009-10-01

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BF5020W pdf
BF5020...
Gate 1 forward transconductance
gfs = ƒ(ID)
VDS = 5V, VG2S = Parameter
50
mS
4V
40 3V
35
30
25
20
2V
15
10
1.5V
5
00 5 10 15 20 25 30 35 mA 45
ID
Drain current ID = ƒ(VG1S)
VDS = 5V
VG2S = Parameter
30
mA
24
22
20
4V
3V
18 2 V
16
1.5 V
1V
14
12
10
8
6
4
2
00 0.2 0.4 0.6 0.8 1 1.2 1.4 V 1.8
VG1S
Drain current ID = ƒ(VGG)
VDS = 5V, VG2S = 4V, RG1 = 120 k
(connected to VGG, VGG=gate1 supply voltage)
16
mA
12
10
8
6
4
2
00 1 2 3 V 5
VGG
Drain current ID = ƒ(VGG)
VG2S = 4V
RG1 = Parameter in k
24
mA
68K
20 82K
18
100K
16
120K
14
12 150K
180K
10
8
6
4
2
00 1 2 3 4 V 6
VGG=VDS
5 2009-10-01

5 Page





BF5020W arduino
BF5020...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office ( www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11 2009-10-01

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