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Número de pieza BFP840ESD
Descripción Robust Low Noise Silicon Germanium Bipolar RF Transistor
Fabricantes Infineon 
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BFP840ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-03-28
RF & Protection Devices

1 page




BFP840ESD pdf
BFP840ESD
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP840ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 , VCE, f = Parameters . . . . . . . . . 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 , f = 5.5 GHz . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 , f = 5.5 GHz . . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . 23
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 , f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP840ESD: T8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 1.2, 2013-03-28

5 Page





BFP840ESD arduino
5 Electrical Characteristics
BFP840ESD
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
2.25
Collector emitter leakage current
ICES
Collector base leakage current
ICBO
Emitter base leakage current
IEBO
DC current gain
hFE 150
Values
Typ. Max.
2.6
– 400
– 400
– 10
260 450
Unit Note / Test Condition
V IC = 1 mA, IB = 0
Open base
nA VCE = 1.5 V, VBE = 0
E-B short circuited
nA VCB = 1.5 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 1.8 V, IC = 10 mA
Pulse measured
5.2 General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT
Collector base capacitance
CCB
Collector emitter capacitance
CCE
Emitter base capacitance
CEB
Values
Typ. Max.
80 –
37 –
0.40 –
0.41 –
Unit Note / Test Condition
GHz
fF
pF
pF
VCE = 1.8 V, IC = 25 mA
f = 2 GHz
VCB = 1.8 V, VBE = 0
f = 1 MHz
Emitter grounded
VCE = 1.8 V, VBE = 0
f = 1 MHz
Base grounded
VEB = 0.4 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 1.2, 2013-03-28

11 Page







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