|
|
Número de pieza | BFP840ESD | |
Descripción | Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
Fabricantes | Infineon | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BFP840ESD (archivo pdf) en la parte inferior de esta página. Total 28 Páginas | ||
No Preview Available ! BFP840ESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2013-03-28
RF & Protection Devices
1 page BFP840ESD
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP840ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . . 16
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 1.8 V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Figure 5-4 Collector Current vs. Base Emitter Forward Voltage IC = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . 17
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 17
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 1.8 V . . . . . . . . . . . . . . . . . . . 18
Figure 5-7 Transition Frequency fT = f (IC), f = 2 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-8 3rd Order Intercept Point at output OIP3 = f (IC), ZS = ZL = 50 Ω, VCE, f = Parameters . . . . . . . . . 19
Figure 5-9 3rd Order Intercept Point at output OIP3 [dBm]= f (IC, VCE), ZS = ZL = 50 Ω, f = 5.5 GHz . . . . . . 20
Figure 5-10 Compression Point at output OP1dB [dBm]= f (IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz . . . . . . . . . . . 20
Figure 5-11 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-12 Gain Gma, Gms, IS21I² = f (f), VCE = 1.8 V, IC = 10 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-13 Maximum Power Gain Gmax = f (IC), VCE = 1.8 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 22
Figure 5-14 Maximum Power Gain Gmax = f (VCE), IC = 10 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-15 Input Reflection Coefficient S11 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-16 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA . . . . . . 23
Figure 5-17 Output Reflection Coefficient S22 = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA. . . . . . . . . . . . . . . . . . . . 24
Figure 5-18 Noise Figure NFmin = f (f), VCE = 1.8 V, IC = 5 / 10 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-19 Noise Figure NFmin = f (IC), VCE = 1.8 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 5-20 Noise Figure NF50 = f (IC), VCE = 1.8 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP840ESD: T8s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 1.2, 2013-03-28
5 Page 5 Electrical Characteristics
BFP840ESD
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
2.25
Collector emitter leakage current
ICES
–
Collector base leakage current
ICBO
–
Emitter base leakage current
IEBO
–
DC current gain
hFE 150
Values
Typ. Max.
2.6
– 400
– 400
– 10
260 450
Unit Note / Test Condition
V IC = 1 mA, IB = 0
Open base
nA VCE = 1.5 V, VBE = 0
E-B short circuited
nA VCB = 1.5 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 1.8 V, IC = 10 mA
Pulse measured
5.2 General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT –
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
Values
Typ. Max.
80 –
37 –
0.40 –
0.41 –
Unit Note / Test Condition
GHz
fF
pF
pF
VCE = 1.8 V, IC = 25 mA
f = 2 GHz
VCB = 1.8 V, VBE = 0
f = 1 MHz
Emitter grounded
VCE = 1.8 V, VBE = 0
f = 1 MHz
Base grounded
VEB = 0.4 V,VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 1.2, 2013-03-28
11 Page |
Páginas | Total 28 Páginas | |
PDF Descargar | [ Datasheet BFP840ESD.PDF ] |
Número de pieza | Descripción | Fabricantes |
BFP840ESD | Robust Low Noise Silicon Germanium Bipolar RF Transistor | Infineon |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |