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PDF BFP640FESD Data sheet ( Hoja de datos )
| Número de pieza | BFP640FESD | |
| Descripción | Robust Low Noise Silicon Germanium Bipolar RF Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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BFP640FESD
Robust Low Noise Silicon Germanium Bipolar RF Transistor
Data Sheet
Revision 1.2, 2012-09-19
RF & Protection Devices
1 page  
BFP640FESD
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP640FESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter in µA. . . . . . . . . . . . . 17
Figure 5-3 DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Figure 5-4 Collector Current vs. Base-Emitter Voltage IC = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-5 Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 18
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-7 Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters . . . . . . . . . . . . . . . . . 20
Figure 5-9 Collector Base Capacitance CCB = f (VCB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-10 Gain Gma, Gms, IS21I² = f (f), VCE = 3 V, IC = 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-11 Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 22
Figure 5-12 Maximum Power Gain Gmax = f (VCE), IC = 30 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 22
Figure 5-13 Input Matching S11 = f (f), VCE = 3 V, IC = 6 / 30 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Source Impedance for Minimum Noise Figure Zopt = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . 23
Figure 5-15 Output Matching S22 = f (f), VCE = 3 V, IC = 6 / 30 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Noise Figure NFmin = f (f), VCE = 3 V, IC = 6 / 30 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-17 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-18 Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 25
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-3 Marking Description (Marking BFP640FESD: T4s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Data Sheet
5 Revision 1.2, 2012-09-19
5 Page 
5 Electrical Characteristics
BFP640FESD
Electrical Characteristics
5.1 DC Characteristics
Table 5-1 DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage V(BR)CEO
Min.
4.1
Collector emitter leakage current
ICES
–
Collector base leakage current
ICBO
–
Emitter base leakage current
IEBO
–
DC current gain
hFE 110
Values
Typ. Max.
4.7 –
– 500
– 500
– 10
180 270
Unit Note / Test Condition
V IC = 1 mA, IB = 0
Open base
nA VCE = 2 V, VBE = 0
E-B short circuited
nA VCB = 2 V, IE = 0
Open emitter
μA VEB = 0.5 V, IC = 0
Open collector
VCE = 3 V, IC = 30 mA
Pulse measured
5.2 General AC Characteristics
Table 5-2 General AC Characteristics at TA = 25 °C
Parameter
Symbol
Min.
Transition frequency
fT –
Collector base capacitance
CCB
–
Collector emitter capacitance
CCE
–
Emitter base capacitance
CEB –
Values
Typ. Max.
46 –
0.08 –
0.35 –
0.6 –
Unit Note / Test Condition
GHz
pF
pF
pF
VCE = 3 V, IC = 30 mA,
f = 1 GHz
VCB = 3 V, VBE = 0 V
f = 1 MHz
Emitter grounded
VCE = 3 V, VBE = 0 V
f = 1 MHz
Base grounded
VEB = 0.4 V, VCB = 0 V
f = 1 MHz
Collector grounded
Data Sheet
11 Revision 1.2, 2012-09-19
11 Page | ||
| Páginas | Total 28 Páginas | |
| PDF Descargar | [ Datasheet BFP640FESD.PDF ] | |
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