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PDF DMP56D0UFB Data sheet ( Hoja de datos )

Número de pieza DMP56D0UFB
Descripción P-CHANNEL ENHANCEMENT MODE MOSFET
Fabricantes Diodes 
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DMP56D0UFB
Green P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
-50V
RDS(ON)
6Ω @ VGS = -4 V
8Ω @ VGS = -2.5V
ID
TA = +25°C
-200mA
-160mA
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
DC-DC Converters
Power Management Functions
Battery Operated Systems and Solid-State Relays
Features and Benefits
Low On-Resistance
ESD Protected Gate
Low Input/Output Leakage
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: X1-DFN1006-3
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish NiPdAu over Copper Leadframe;
Solderable per MIL-STD-202, Method 208 e4
Terminal Connections: See Diagram
Weight: 0.001 grams (Approximate)
Drain
X1-DFN1006-3
ESD PROTECTED
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number
DMP56D0UFB-7
DMP56D0UFB-7B
Case
X1-DFN1006-3
X1-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
DMP56D0UFB
Document number: DS36175 Rev. 3 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated

1 page




DMP56D0UFB pdf
1.5
1
ID = -250µA
ID = -1mA
0.5
0
-50 -25 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
100
10
1
0 5 10 15 20 25 30 35 40
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DMP56D0UFB
1
TA = 150°C
0.8
TA = 125°C
TA = 85°C
0.6
TA = 25°C
0.4
TA = -55°C
0.2
0
0 0.3 0.6 0.9 1.2 1.5
-VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
6
VDS = -25V
ID = -100mA
4
2
0
0 0.2 0.4 0.6 0.8 1 1.2
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge Characteristics
DMP56D0UFB
Document number: DS36175 Rev. 3 - 2
5 of 7
www.diodes.com
May 2015
© Diodes Incorporated

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