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PDF DMN2104L Data sheet ( Hoja de datos )
| Número de pieza | DMN2104L | |
| Descripción | N-CHANNEL ENHANCEMENT MODE MOSFET | |
| Fabricantes | Diodes | |
| Logotipo |  |
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DMN2104L
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
Mechanical Data
• Low On-Resistance
• 53mΩ @VGS = 4.5V
• 104mΩ @VGS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23 Drain
D
Gate
TOP VIEW
Source
Equivalent Circuit
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Symbol
VDSS
VGSS
ID
IDM
GS
TOP VIEW
Value
20
±12
4.3
15
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS (ON)
|Yfs|
VSD
Ciss
Coss
Crss
Min
20
⎯
⎯
0.45
⎯
⎯
⎯
⎯
⎯
⎯
Typ Max Unit
Test Condition
⎯ ⎯ V VGS = 0V, ID = 250μA
⎯ 500 nA VDS = 20V, VGS = 0V
⎯ ±100 nA VGS = ±12V, VDS = 0V
⎯ 1.4 V VDS = VGS, ID = 250μA
42
84
53
104
mΩ VGS = 4.5V, ID = 4.2A
VGS = 2.5V, ID = 3.1A
6.6 ⎯ S VDS =5V, ID = 4.2A
0.7 1.2 V VGS = 0V, IS = 1.0A
325 ⎯ pF
92
⎯
pF VDS = 10V, VGS = 0V
f = 1.0MHz
70 ⎯ pF
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with RθJA = 90°C/W.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
DMN2104L
Document number: DS31560 Rev. 1 - 2
1 of 4
www.diodes.com
October 2008
© Diodes Incorporated
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