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PDF BFP540ESD Data sheet ( Hoja de datos )
| Número de pieza | BFP540ESD | |
| Descripción | Low Noise Silicon Bipolar RF Transistor | |
| Fabricantes | Infineon | |
| Logotipo |  |
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Low Noise Silicon Bipolar RF Transistor
• For ESD protected high gain low noise amplifier
• High ESD robustness
typical value 1000 V (HBM)
• Outstanding Gms = 21.5 dB @ 1.8 GHz
Minimum noise figure NFmin = 0.9 dB @ 1.8 GHz
• Pb-free (RoHS compliant) and halogen-free package
with visible leads
• Qualification report according to AEC-Q101 available
BFP540ESD
3
4
2
1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFP540ESD
Marking
Pin Configuration
AUs 1=B 2=E 3=C 4=E -
-
Package
SOT343
Maximum Ratings at TA = 25 °C, unless otherwise specified
Parameter
Symbol
Collector-emitter voltage
TA = 25 °C
TA = -55 °C
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Base current
Total power dissipation1)
TS ≤ 77°C
Junction temperature
Ambient temperature
Storage temperature
VCEO
VCES
VCBO
VEBO
IC
IB
Ptot
TJ
TA
TStg
1TS is measured on the emitter lead at the soldering point to the pcb
Value
4.5
4
10
10
1
80
8
250
150
-65 ... 150
-65 ... 150
Unit
V
mA
mW
°C
1 2013-09-13
1 page  
Third order Intercept Point IP3 = ƒ (IC)
(Output, ZS = ZL = 50 Ω )
VCE = parameter, f = 900 MHz
30
25 4.00V 2.00V
3.00V
1.50V
20
1.00V
15
10
5
0
0 10 20 30 40 50 60 70 80
I [mA]
C
Power gain Gma, Gms = ƒ (f)
VCE = 3 V, IC = 25 mA
45
40
35
30
G
ms
25
20
15
|S |2
21
10
G
ma
5
0123456
f [GHz]
BFP540ESD
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
30
25
20 3 − 4.5V
15
2.00V
10
1.00V
0.75V
5
0.50V
0
0 10 20 30 40 50 60 70 80 90 100
I [mA]
C
Power gain Gma, Gms = ƒ (IC)
VCE = 3 V
f = parameter in GHz
28
26
24 0.90GHz
22
20
18
1.80GHz
16
2.40GHz
14
3.00GHz
12
10 4.00GHz
8 5.00GHz
6.00GHz
6
0 10 20 30 40 50 60 70 80 90 100
I [mA]
C
5 2013-09-13
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet BFP540ESD.PDF ] | |
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