DataSheet.es    


PDF BM63764S-VC Data sheet ( Hoja de datos )

Número de pieza BM63764S-VC
Descripción 600V IGBT Intelligent Power Module
Fabricantes ROHM Semiconductor 
Logotipo ROHM Semiconductor Logotipo



Hay una vista previa y un enlace de descarga de BM63764S-VC (archivo pdf) en la parte inferior de esta página.


Total 23 Páginas

No Preview Available ! BM63764S-VC Hoja de datos, Descripción, Manual

Datasheet
Inverter for motor control
600V IGBT Intelligent Power Module (IPM)
for high speed switching drive
BM63764S-VA BM63764S-VC
General Description
BM63764S-VA /-VC is an Intelligent Power Module
composed of gate drivers, bootstrap diodes, IGBTs, fly
wheel diodes. Small switching loss IGBTs optimized for
high speed switching drive such as a washing machine
or a fan motor is adopted.
Features
3phase DC/AC Inverter
600V/15A
Low Side IGBT Open Emitter
Built -in Bootstrap Diode
High Side IGBT Gate Driver(HVIC):
SOI (Silicon On Insulator) Process,
Drive Circuit, High Voltage Level Shifting,
Current Limit for Bootstrap Diode,
Control Supply Under-Voltage Locked Out (UVLO)
Low Side IGBT Gate Driver(LVIC):
Drive Circuit, Short Circuit Current Protection (SCP),
Control Supply Under Voltage Locked Out (UVLO),
Thermal Shutdown (TSD)
Fault Signal(LVIC)
Corresponding to SCP (Low Side IGBT), TSD, UVLO
Fault
Input Interface 3.3V, 5V Line
Application
High Speed Switching Drive of AC100 to 240Vrms(DC
Voltage: Less Than 400V) Class Motor
High Speed Switching Drive of Motor for Washing
Machine, Fan
Key Specifications
IGBT Collector-Emitter Voltage VCESAT: 1.7V(Typ)
FWD Forward Voltage VF:
1.5V(Typ)
FWD Reverse Recovery Time trr:
Module Case Temperature TC:
100ns(Typ)
-25 to +100°C
Junction Temperature Tjmax:
150°C
Package
HSDIP25
HSDIP25VC
W(Typ) x D(Typ) x H(Typ)
38.0mm x 24.0mm x 3.5mm
38.0mm x 24.0mm x 3.5mm
HSDIP25
Typical Application Circuit
Figure 1. Example of Application Circuit
+
+
+
5V
2 VBU
3 VBV
4 VBW
5 HINU
6 HINV
7 HINW
8 HVCC
9 GND
10 LINU
11 LINV
12 LINW
13 LVCC
+
15V
14 FO
15 CIN
16 GND
P 24
U 23
V 22
W 21
NU 20
M
+
NV 19
NW 18
Product structure: Semiconductor IC This product is not designed for protection against radioactive rays
.www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211114001
1/20
TSZ02201-0747AB500020-1-2
11.Nov.2014 Rev.002

1 page




BM63764S-VC pdf
BM63764S-VA BM63764S-VC
Recommended Operating Conditions
Item Symbol
Supply Voltage
Control Power Supply
VP
VCC
Min
0
13.5
Limit
Typ
300
15.0
Max
400
16.5
Floating Control Power Supply VBS 13.0 15.0 18.5
Control Power Supply Variation
Control Input Voltage
VCC
VBS
VIN
-1
0
- +1
- 5.5
Current Sensing Input Voltage
VCIN
0
- 5.5
Blanking Time for Preventing
Arm-short
tdead
1.5
-
-
PWM Input Frequency
fPWM
-
- 20
High Side IGBT
PWONH
Minimum Input Pulse Width(Note1) PWOFFH
0.8
0.8
-
-
-
-
Low Side IGBT
PWONL
Minimum Input Pulse Width(Note1) PWOFFL
2.5
0.8
-
-
-
-
Voltage Variation Between
GND- NU, NV, NW
VN -5 - +5
Junction Temperature
Tj -25
- +125
(Note 1) IPM might not respond if the input signal pulse width is less than PWON, PWOFF.
Unit Conditions
V
V
V
V/µs
V
V
µs
kHz
µs
µs
µs
µs
V
°C
Applied between P-NU,NV,NW
Applied between
HVCC-GND, LVCC-GND
Applied between
VBU-U, VBV-V, VBW-W
For each input signal
TC 100°C, Tj 125°C
Between GND-NU, NV, NW
(Including surge voltage)
Electrical Characteristics (Unless otherwise specified, Tj=25°C, VCC=VBS=15V, VP=300V)
Inverter Part
Limit
Item Symbol
Unit
Min Typ Max
Collector-Emitter Saturation Voltage
VCESAT
-
-
1.70 2.10 V
0.90 1.20 V
Collector-Emitter Cut-off Current
ICES
-
- 100 µA
FWD Forward Voltage
VF - 1.50 2.00 V
FWD Reverse Recovery Time
trr - 100 - ns
High Side IGBT Turn on Delay Time
tonH 0.50
0.90
1.40 µs
High Side IGBT Turn on Switching Time tc(on)H
-
0.20
- µs
High Side IGBT Turn off Delay Time
toffH -
1.00 1.70 µs
High Side IGBT Turn off Switching Time tc(off)H
-
0.20
- µs
Low Side IGBT Turn on Delay Time
tonL 0.80 1.70 2.50 µs
Low Side IGBT Turn on Switching Time tc(on)L
-
0.25
- µs
Low Side IGBT Turn off Delay Time
toffL - 0.65 1.15 µs
Low Side IGBT Turn off Switching Time tc(off)L
-
0.20
- µs
Conditions
IC=15A
IC=1.5A
VCE=VCES
IF=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
Inductive Load, IC=15A
HINX
LINX
50%
toff
IC tdoff
90%
tf
VCE
50%
ton
tdon
trr
90%
10% 10%
10%
10%
tc(off)
tc(on)
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
Figure 4. Switching Time Definition
5/20
TSZ02201-0747AB500020-1-2
11.Nov.2014 Rev.002

5 Page





BM63764S-VC arduino
BM63764S-VA BM63764S-VC
4) Thermal Shutdown (TSD), monitoring LVIC temperature
d1 Normal operation: IGBT ON and outputs current IC.
d2 LVIC temperature (Tj) exceeds thermal shutdown trip level (TSDT).
d3 All low side IGBTs turn off in spite of control input condition.
d4 FO outputs for tFO=20µs (Min),
but output is extended while Tj is above thermal shutdown release level (TSDT-TSDHYS).
d5 Tj drops to TSDT-TSDHYS
d6 Even if Tj reaches TSDT-TSDHYS during LIN=H, IGBTs don’t turn on until inputting the next ON signal (LIN=LH).
IGBT of each phase can return to normal state by inputting ON signal to each phase.
d7 Normal operation: IGBT ON and outputs current IC.
LIN
TSD
TSDT
Tj (LVIC)
TSDT-TSDHYS
d1
Ic
FO
d6
SET RESET
d2
d5
d3 d7
d4
Figure 13. TSD Timing Chart
Notice
1) In case of TSD trip and FO output, please stop controlling IPM quickly to avoid the abnormal state.
2) If the cooling system is in abnormal state (e.g. heat sink comes off, fixed loosely, or cooling fan stops) when TSD trips,
dont reuse IPM. This may cause the junction temperature of power chips to exceed its maximum rating of Tjmax
(150°C).
3) TSD function detects LVIC temperature, so it cannot respond to rapid temperature rise of power chip. Therefore, TSD
will not work properly in the case of rapid temperature rise like motor lock or over current.
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ2211115001
11/20
TSZ02201-0747AB500020-1-2
11.Nov.2014 Rev.002

11 Page







PáginasTotal 23 Páginas
PDF Descargar[ Datasheet BM63764S-VC.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
BM63764S-VA600V IGBT Intelligent Power ModuleROHM Semiconductor
ROHM Semiconductor
BM63764S-VC600V IGBT Intelligent Power ModuleROHM Semiconductor
ROHM Semiconductor

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar