DataSheet.es    


PDF IRG4PSH71UD Data sheet ( Hoja de datos )

Número de pieza IRG4PSH71UD
Descripción UltraFast Copack IGBT
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



Hay una vista previa y un enlace de descarga de IRG4PSH71UD (archivo pdf) en la parte inferior de esta página.


Total 10 Páginas

No Preview Available ! IRG4PSH71UD Hoja de datos, Descripción, Manual

PD - 91686
IRG4PSH71UD
INSULATED GATE BIPOLAR TRANSISTOR WITH
UltraFast Copack IGBT
ULTRAFAST SOFT RECOVERY DIODE
Features
• UltraFast switching speed optimized for operating
frequencies 8 to 40kHz in hard switching, 200kHz
in resonant mode soft switching
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency
(minimum switching and conduction losses) than
prior generations
• Industry-benchmark Super-247 package with
higher power handling capability compared to
same footprint TO-247
• Creepage distance increased to 5.35mm
Benefits
• Generation 4 IGBT's offer highest efficiencies
available
• Maximum power density, twice the power
handling of the TO-247, less space than TO-264
• IGBTs optimized for specific application conditions
• Cost and space saving in designs that require
multiple, paralleled IGBTs
• HEXFREDTM antiparallel Diode minimizes
switching losses and EMI
Absolute Maximum Ratings
C
G
E
n-channel
VCES = 1200V
VCE(on) typ. = 2.52V
@VGE = 15V, IC = 50A
SUPER - 247
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
ÙPulse Collector Current
dClamped Inductive Load current
VGE Gate-to-Emitter Voltage
IF @ Tc = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Storage Temperature Range, for 10 sec.
1200
99
50
200
200
±20
70
200
350
140
-55 to +150
300 (0.063 in. (1.6mm) from case)
V
A
V
W
°C
Thermal / Mechanical Characteristics
Parameter
RθJC
RθJC
RθCS
RθJA
Junction-to-Case- IGBT
Junction-to-Case- Diode
Case-to-Sink, flat, greased surface
Junction-to-Ambient, typical socket mount
Recommended Clip Force
Wt Weight
www.irf.com
Min.
–––
–––
–––
–––
20 (2.0)
–––
Typ.
–––
–––
0.24
–––
6 (0.21)
Max.
0.36
0.36
–––
38
–––
Units
°C/W
N (kgf)
g (oz.)
1
5/24/04

1 page




IRG4PSH71UD pdf
IRG4PSH71UD
14000
12000
10000
8000
VGE = 0V, f = 1 MHZ
Cies = C ge + Cgc, C ce
Cres = C gc
Coes = Cce + Cgc
Cies
SHORTED
6000
4000
2000
Coes
Cres
0
1 10 100 1000
VCE, Collector-to-Emitter Voltage (V)
Fig. 7 - Typical Capacitance vs.
Collector-to-Emitter Voltage
20
VCC = 400V
IC = 70A
16
12
8
4
0
0
100 200 300 400
QG, Total Gate Charge (nC)
Fig. 8 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
22
VCC = 960V
VGE = 15V
TJ = 25°C
I C = 70A
20
18
1000
RG = 5.0
VGE = 15V
VCC = 960V
100
IC = 140A
IC = 70A
10
IC = 35A
16
0
10 20 30
RG, Gate Resistance ()
40
Fig. 9 - Typical Switching Losses vs.
Gate Resistance
www.irf.com
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ, Junction Temperature (°C)
Fig. 10 - Typical Switching Losses vs.
Junction Temperature
5

5 Page










PáginasTotal 10 Páginas
PDF Descargar[ Datasheet IRG4PSH71UD.PDF ]




Hoja de datos destacado

Número de piezaDescripciónFabricantes
IRG4PSH71UINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier
IRG4PSH71UDUltraFast Copack IGBTInternational Rectifier
International Rectifier
IRG4PSH71UDPBFINSULATED GATE BIPOLAR TRANSISTORInternational Rectifier
International Rectifier

Número de piezaDescripciónFabricantes
SLA6805M

High Voltage 3 phase Motor Driver IC.

Sanken
Sanken
SDC1742

12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.

Analog Devices
Analog Devices


DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares,
permitiéndote verlos en linea o descargarlos en PDF.


DataSheet.es    |   2020   |  Privacy Policy  |  Contacto  |  Buscar