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PDF RF5112 Data sheet ( Hoja de datos )

Número de pieza RF5112
Descripción 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER
Fabricantes RF Micro Devices 
Logotipo RF Micro Devices Logotipo



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No Preview Available ! RF5112 Hoja de datos, Descripción, Manual

RF5112
3V TO 5V, 2.4GHz TO 2.5GHz
LINEAR POWER AMPLIFIER
Package Style: QFN, 16-Pin, 3mmx3mmx0.9mm
Features
Single Power Supply 3.0V to
5.0 V
+23dBm, <4%EVM, 250mA at
VCC = 5.0 V
+21dBm, <4.0%EVM, 185mA
atVCC = 3.3 V
28dB Typical Small Signal Gain
50Input and Interstage Match-
ing
2400MHz to 2500MHz Fre-
quency Range
Applications
IEEE802.11b/g/n WiFi Applica-
tions
2.5GHz ISM Band Applications
Commercial and Consumer Sys-
tems
Portable Battery-Powered Equip-
ment
Spread-Spectrum and MMDS
Systems
NC 1
16
RF IN 2
RF IN 3
Input
Match
NC 4
5
15 14
Inter-
1st Stage
Match
13
12
RFOUT/
VC2
2nd 11 RF OUT
Bias
6
7
10 RF OUT
9 NC
8
Functional Block Diagram
Product Description
The RF5112 is a linear, medium-power, high-efficiency, two-stage amplifier IC
designed specifically for battery-powered WiFi applications such as PC cards, mini
PCI, and compact flash applications. The device is manufactured on an advanced
InGaP Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in 2.5GHz OFDM and other spread-
spectrum transmitters. The device is provided in a 3mmx3mmx0.9mm, 16-pin,
QFN with a backside ground. The RF5112 is designed to maintain linearity over a
wide range of supply voltage and power output.
DS110617
Ordering Information
RF5112
Standard 25 piece bag
RF5112SR
Standard 100 piece reel
RF5112TR7
Standard 2500 piece reel
RF5112WL50PCK-41XFully Assembled Evaluation Board Kit (5.0V Tune)
RF5112WL33PCK-41XFully Assembled Evaluation Board Kit (3.3V Tune)
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5112 pdf
Package Drawing
0.10 C A
-A-
3.00
2 PLCS
1.50 TYP
2 PLCS
0.10 C B
0.70
0.65
0.05 C
0.90
0.85
0.05
0.00
2 PLCS
0.10 C B
2 PLCS
0.10 C A
3.00
2.75 SQ
-B-
1.37 TYP
0.60
0.24
TYP
12°
MAX
SEATING
-C- PLANE
0.10 M C A B
0.30
0.18
PIN 1 ID
R.20
Dimensions in mm.
Shaded lead is pin 1.
1.65
1.35
SQ.
0.50
0.30
0.50
Pin Out
RF5112
NC 1
RF IN 2
RF IN 3
NC 4
16 15 14 13
12 VCC2
11 RF OUT
10 RF OUT
9 NC
5678
DS110617
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF5112 arduino
RF5112
5V Operation Typical Performance
EVM versus Output Power over Frequency
VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C
12.0
2400 MHz
2450 MHz
10.0 2500 MHz
Gain versus Output Power over Frequency
VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C
32.0
8.0 30.0
6.0
4.0 28.0
2.0
0.0
0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0
Output Power (dBm)
ICC versus Output Power over Frequency
0.35 VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C
0.30
0.25
0.20
0.15
0.10
0.05
2400 MHz
2450 MHz
2500 MHz
0.00
0.00 3.00 6.00 9.00 12.00 15.00 18.00 21.00 24.00 27.00
Output Power (dBm)
2400 MHz
2450 MHz
2500 MHz
26.0
0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0
Output Power (dBm)
PDETECT versus Output Power over Frequency
3.0 VCC=5.0V, OFDM 54Mbps, 50% Duty Cycle, Temp=25°C
2.5
2.0
1.5
1.0
0.5 2400 MHz
2450 MHz
2500 MHz
0.0
0.0 3.0 6.0 9.0 12.0 15.0 18.0 21.0 24.0 27.0
Output Power (dBm)
DS110617
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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