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PDF RDA1005L Data sheet ( Hoja de datos )
| Número de pieza | RDA1005L | |
| Descripción | DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER | |
| Fabricantes | RF Micro Devices | |
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Hay una vista previa y un enlace de descarga de RDA1005L (archivo pdf) en la parte inferior de esta página. Total 10 Páginas | ||
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RDA1005LDig-
ital Controlled
Variable Gain
Amplifier
50MHz to
4000MHz, 6
Bit
RDA1005L
DIGITAL CONTROLLED VARIABLE GAIN
AMPLIFIER 50MHZ TO 4000MHZ, 6 BIT
Package: MCM, 32-Pin, 5.2mm x 5.2mm
Features
Broadband 50MHz to 4000MHz
Operation
6-Bit Digital Step Attenuator
Serial Mode Programming
Gain = -13.5dB to +18dB (0.5dB
Step Size)
High OIP3/P1dB =
+36dB/20dBm
Single +5V Supply
Small 32-Pin, 5.2mm x 5.2mm,
MCM (Footprint Compatible with
5mm x 5mm 32-Pin QFN)
Applications
Cellular, 3G Infrastructure
WiBro, WiMax, LTE
Microwave Radio
High Linearity Power Control
32 31 30 29 28 27 26 25
AMPIN 1
24 NC
GND 2
GND 3
6-bit SPI
23 NC
22 NC
ATTOUT 4
21 NC
ACG1 5
ACG2 6
DSA
20 NC
19 NC
ACG3 7
18 NC
ACG4 8
17 Vdd
9 10 11 12 13 14 15 16
E-pad
GND
Functional Block Diagram
Product Description
RFMD’s RDA1005L is a digitally controlled variable gain amplifier featuring high lin-
earity over the entire gain control range with noise figure less than 6dB in its maxi-
mum gain state. The gain of the 6-bit digital step attenuator is programmed with a
serial mode control interface. The RDA1005L is packaged in a small 5.2mm x
5.2mm leadless laminate MCM which contains plated through thermal vias for
ultra-low thermal resistance. The footprint for this thermal vias for ultra low thermal
resistance. The footprint for this module is directly compatible with a 5mm x 5mm
QFN. This module is easy to use with no external matching components required.
Ordering Information
RDA1005LSQ
RDA1005LSR
RDA1005LTR7
RDA1005LTR13
RDA1005LPCK-410
Sample bag with 25 pieces
7” Sample reel with 100 pieces
7” Reel with 750 pieces
13” Reel with 2500 pieces
50MHz to 4000MHz PCBA with 5-piece sample bag
DS120828
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
1 page  
RDA1005L
Typical Performance - Broadband Application Circuit
Max Gain OIP3 versus Frequency Over Temperature
45
43
41
39
37
OIP3 (dBm) 35
33
31
29
27
25
0.4
+25C
-40C
+85C
0.85
1.95
2.14
Freq (GHz)
2.7
3.3
3.8
22
21
20
19
P1dB
(dBm) 18
17
16
15
0.4
Max Gain P1dB versus Frequency Over Temperature
+25C
-40C
+85C
0.85
1.95
2.14
2.7
3.3
3.8
Freq (GHz)
Max Gain NF versus Frequency Over Temperature
+25C
9
8
7
NF (dB)
6
5
4
0.4 0.8 1.2 1.6
+85C
2 2.4 2.8
Freq (GHz)
DS120828
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet RDA1005L.PDF ] | |
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