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Número de pieza | RBR2MM30A | |
Descripción | Schottky Barrier Diode | |
Fabricantes | ROHM Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de RBR2MM30A (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Schottky Barrier Diode
RBR2MM30A
Data Sheet
lApplication
General rectification
lDimensions (Unit : mm)
1.6±0.1
lLand Size Figure (Unit : mm)
0.1±0.1
0.05
1.2
lFeatures
1) Small power mold type
(PMDU)
2) High reliability
3) Low VF
lConstruction
Silicon epitaxial planar type
PMDU
0.9±0.1
ROHM : PMDU
JEDEC : SOD-123FL
: Manufacture Date
0.8±0.1
lStructure
Cathode
lTaping Dimensions (Unit : mm)
4.0±0.1 2.0±0.05
φf 1.55±0.05
Anode
0.25±0.05
1.81±0.1
4.0±0.1
φf 1.0±0.1
1.5MAX
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive peak reverse voltage
VRM
Duty≦0.5
30 V
Reverse voltage
VR Direct reverse voltage
Average forward rectified current
Non-repetitive forward current surge peak
Io
IFSM
Glass epoxy board mounted, 60Hz half sin wave,
resistive load , Tc=90ºC Max.
60Hz half sin wave, one cycle,
non-repetitive at Ta=25ºC
Operating junction temperature
Tj
-
30
2
30
150
V
A
A
°C
Storage temperature
Tstg
- -55 to +150 °C
lElectrical Characteristics (Tj= 25°C)
Parameter
Symbol
Forward voltage
VF
Reverse current
IR
Conditions
IF=2.0A
VR=30V
Min. Typ. Max. Unit
- - 0.53 V
- - 50 mA
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
1/5
2015.03 - Rev.A
1 page RBR2MM30A
lElectrical Characteristic Curves
Data Sheet
1
Tj = 150°C
0.8
0.6
Sin(θ=180)
0.4
D = 1/2
DC
0.2
0
0 10 20 30
REVERSE VOLTAGE : VR (V)
VR-PR CHARACTERISTICS
6 Glass epoxy board mounted
IO
0A
5 0V
4
DC
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
3
D = 1/2
2
1 Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta (°C)
DERATING CURVE (Io-Ta)
6
5
4 DC
Glass epoxy board mounted
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
3
D = 1/2
2
1 Sin(θ=180)
0
0 25 50 75 100 125
CASE TEMPERATURE : Tc (°C)
DERATING CURVE (Io-Tc)
150
30
No destruction at 30kV
25
20
15
Ave. : 9.2kV
10
5
C=200pF
0 R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
5/5
2015.03 - Rev.A
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet RBR2MM30A.PDF ] |
Número de pieza | Descripción | Fabricantes |
RBR2MM30A | Schottky Barrier Diode | ROHM Semiconductor |
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