|
|
PDF RB550VAM-30 Data sheet ( Hoja de datos )
| Número de pieza | RB550VAM-30 | |
| Descripción | Schottky Barrier Diode | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de RB550VAM-30 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
Schottky Barrier Diode
RB550VAM-30
Data Sheet
lApplication
General rectification
lFeatures
1) Small power mold type
(TUMD2M)
2) High reliability
3) Low VF
lDimensions (Unit : mm)
1.4±0.1
0.8±0.05
(1)
0.17±0.04
0.6±0.1
lLand Size Figure (Unit : mm)
1.1
(2)
ROHM : TUMD2M
Manufacture Date
0～0.1
TUMD2M
lStructure (1) Cathode
lConstruction
Silicon epitaxial planar type
lTaping Dimensions (Unit : mm)
4.0±0.1
2.0±0.05
4.0±0.1
Φ 1.5+-00.1
(2) Anode
0.25±0.05
1.53±0.03
Φ
+0.2
1.0-0
0.9±0.08
lAbsolute Maximum Ratings (Tc= 25°C)
Parameter
Symbol
Conditions
Limits Unit
Repetitive Peak Reverse Voltage
VRM
Duty≦0.5
30 V
Reverse Voltage
VR Direct Reverse Voltage
30 V
Average Forward Rectified Current
Non-repetitive Forward Current Surge Peak
Io
IFSM
Glass epoxi mounted, 60Hz half sin Wave
resistive load, Tc=100°C max.
60Hz half sin wave ,
Non-repetitive at Ta=25°C, 1cycle
1
3
A
A
Operating Junction Temperature
Tj
-
150 °C
Storage Temperature
Tstg
- -40 to +150 °C
lElectrical Characteristics (Tj = 25°C)
Parameter
Symbol
Forward Voltage
Reverse Current
VF1
VF2
IR
Conditions
IF=0.7A
IF=1.0A
VR=10V
Min. Typ. Max. Unit
- 0.45 0.49 V
- 0.48 0.52 V
- 1 30 mA
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
1/5
2014.12 - Rev.B
1 page  
RB550VAM-30
lElectrical Characteristic Curves
Data Sheet
1000
Rth(j-a)
100
Rth(j-c)
Glass epoxi mounted
10
IM=10mA
IF=0.2A
time
1
0.001 0.01 0.1
1ms300ms
1 10 100 1000
TIME : t(s)
Rth-t CHARACTERISTICS
3
IO
0A
0V
VR t
T D=t/T
2 VR=VRM/2
DC Tj=150°C
D = 1/2
1
Sin(θ=180)
0
0 25 50 75 100 125 150
AMBIENT TEMPERATURE : Ta(°C)
DERATING CURVE (Io-Ta)
3
2 DC
IO
0A
0V
VR t
T
D=t/T
VR=VRM/2
Tj=150°C
D = 1/2
1
Sin(θ=180)
0
0 25 50 75 100 125 150
CASE TEMPERATURE : Tc(°C)
DERATING CURVE (Io-Tc)
30
No destruction at 30kV
25
20
15 AVE. : 5.6kV
10
5
C=200pF
0 R=0W
C=100pF
R=1.5kW
ESD DISPERSION MAP
www.rohm.com
© 2014 ROHM Co., Ltd. All rights reserved.
5/5
2014.12 - Rev.B
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet RB550VAM-30.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| RB550VAM-30 | Schottky Barrier Diode | ROHM Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |