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PDF 88N29 Data sheet ( Hoja de datos )

Número de pieza 88N29
Descripción BUILT-IN DELAY CIRCUIT HIGH-PRECISION VOLTAGE DETECTOR
Fabricantes Unisonic Technologies 
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No Preview Available ! 88N29 Hoja de datos, Descripción, Manual

UNISONIC TECHNOLOGIES CO., LTD
88NXX
BUILT-IN DELAY CIRCUIT
HIGH-PRECISION VOLTAGE
DETECTOR
DESCRIPTION
The UTC 88NXX is a high-precision voltage detector developed
basing on CMOS technology. The detection voltage is fixed internally. A
time delayed reset can be accomplished with an external
capacitor. N-ch open-drain output form is available.
The UTC 88NXX is generally used for power supply monitor of
portable equipment such as notebook PCs, digital still cameras, PDAs,
and mobile phones, constant voltage power monitor of cameras, video
equipment and communication equipment, and power monitor or reset of
CPUs and microcomputers.
FEATURES
* Extremely Low Current Dissipation :
1.2μA Typ. (Detection Voltage 1.5 V @ VDD=3.5 V)
* ±2.0 % Accuracy Detection Voltage
* Hysteresis Characteristics: 5% TYP
* Detection Voltage varies from 1.5V to 6.0V with 0.1V step
* Output Forms: N-ch open-drain output (when it is in Active-Low)
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
88NXXL-AD4-R
88NXXG-AD4-R
- 88NXXG-AF5-R
Note: XX: Output Voltage, refer to Marking Information.
Package
SOT-143
SOT-25
CMOS IC
Packing
Tape Reel
Tape Reel
www.unisonic.com.tw
Copyright © 2014 Unisonic Technologies Co., Ltd
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88N29 pdf
88NXX
CMOS IC
ELECTRICAL CHARACTERISTICS(Cont.) (TA=25°C unless otherwise specified)
Detection Voltage: 2.1V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-VDET
VHYS
ISS
VDD
IOUT
ILEAK
- VDET
Ta × -VDET
tD
TEST
CIRCUIT
1
TEST CONDITIONS
1
2 VDD=3.5 V
1
3
Output transistor
Nch, VDS=0.5V, VDD=1.2V
3
Output transistor
Nch, VDS=10V, VDD=10V
MIN TYP MAX
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
5
0.95 10.0
0.59 1.36
0.1
UNIT
V
V
μA
V
mA
μA
1 TA=-40°C ~ +85°C
±100 ±350 ppm/°C
4 VDD=3.5V, CD=4.7 nF
20
42 ms
Detection Voltage: 2.4V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-VDET
VHYS
ISS
VDD
IOUT
ILEAK
- VDET
Ta × -VDET
tD
TEST
CIRCUIT
1
TEST CONDITIONS
1
2 VDD=3.5V
1
3
Output transistor
Nch, VDS=0.5V, VDD=1.2V
3
Output transistor
Nch, VDS=10V, VDD=10V
MIN TYP MAX
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
5
0.95 10.0
0.59 1.36
0.1
UNIT
V
V
μA
V
mA
μA
1 TA=-40°C ~ +85°C
±100 ±350 ppm/°C
4 VDD=3.5V, CD=4.7 nF
20
42 ms
Detection Voltage: 2.7V
PARAMETER
Detection Voltage (Note 1)
Hysteresis Width
Current Consumption
Operating Voltage
Output Current
Leakage Current
Detection Voltage Temperature
Coefficient (Note 2)
Delay Time
SYMBOL
-VDET
VHYS
ISS
VDD
IOUT
ILEAK
- VDET
Ta × -VDET
tD
TEST
CIRCUIT
1
TEST CONDITIONS
1
2 VDD=4.5V
1
3
Output transistor
Nch, VDS=0.5V, VDD=2.4V
3
Output transistor
Nch, VDS=10V, VDD=10V
MIN TYP MAX
-VDET(S)
×0.98
-VDET(S)
-VDET(S)
×1.02
-VDET -VDET -VDET
×0.02 ×0.05 ×0.08
5
0.95 10.0
2.88 4.98
0.1
UNIT
V
V
μA
V
mA
μA
1 TA=-40°C ~ +85°C
±100 ±350 ppm/°C
4 VDD=4.5V, CD=4.7 nF
12
34 ms
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
5 of 8
QW-R502-368.G

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