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PDF L6362A Data sheet ( Hoja de datos )

Número de pieza L6362A
Descripción IO-Link communication transceiver device IC
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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L6362A
IO-Link communication transceiver device IC
Features
Supply voltage from 7 V to 36 V
5 V and 3.3 V compatible I/Os
5 V or 3.3 V, 10 mA selectable linear
regulator
0.3 A output current intervention threshold
Fully protected
Reverse polarity
Overload with cut-off function
Overtemperature
Undervoltage and overvoltage
GND and VCC open wire
-40 to +125 °C ambient temperature
Selectable output stages: high-side, low-
side, push-pull
Suitable to drive L, C and R loads
30 μF output load drive capability
Switching capability of inductors up to 500
mJ
Wake-up detection supported
Fast demagnetization of inductive loads
COM1, COM2 and COM3 mode supported
Designed to meet:
Burst IEC 61000-4-4
Datasheet - production data
ESD IEC 61000-4-2
Surge EN60947-5-2 and IEC61000-4-5
Miniaturized DFN12 (3x3 mm) package
Applications
Industrial sensors
Factory automation
Process control
Description
The L6362A is an IO-Link and SIO mode
transceiver device compliant to PHY2 (3-wire
connection) supporting COM1 (4.8 kbaud),
COM2 (38.4 kbaud) and COM3 (230.4 kbaud)
modes. The output stage can be configured as
high-side, low-side or push-pull and it can drive
resistive, capacitive and inductive loads. It can be
connected to a sensor chip with the industrial 24
V environment. The industrial environment could
be a PLC, an IO-Link master, a relay or a valve.
The L6362A is protected against reverse polarity,
among VCC, GND, OUTH, OUTL and I/Q pins.
Furthermore, the IC is protected against output
short-circuit, overvoltage and fast transient
conditions (±1 kV, 500 Ω and 18 μF coupling).
Table 1: Device summary
Order code
Package
Packing
L6362A
DFN12 (3x3 mm)
Tape and
reel
February 2016
DocID027660 Rev 4
This is information on a product in full production.
1/37
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L6362A pdf
L6362A
List of figures
List of figures
Figure 1: Block diagram ..............................................................................................................................6
Figure 2: Pin connection (top through view) ...............................................................................................7
Figure 3: Push-pull operation....................................................................................................................21
Figure 4: High-side operation ...................................................................................................................21
Figure 5: Low-side operation ....................................................................................................................22
Figure 6: Active clamp equivalent principle schematic. HS configuration (load to GND) .........................23
Figure 7: Active clamp equivalent principle schematic. LS configuration (load to VCC) ..........................23
Figure 8: Fast demagnetization operation example. HS configuration (load to GND) .............................24
Figure 9: Fast demagnetization operation example. LS configuration (load to Vcc) ................................24
Figure 10: Slow demagnetization principle operation. (PP, load to GND)................................................25
Figure 11: Slow demagnetization operation example. HS configuration (load to GND) ..........................25
Figure 12: Slow demagnetization operation example. LS configuration (load to VCC) ...........................26
Figure 13: Output current in overload condition .......................................................................................28
Figure 14: Typical IO-Link sensor application 2 .......................................................................................30
Figure 15: Sensor application without microcontroller ..............................................................................30
Figure 16: Inductive load driver ................................................................................................................31
Figure 17: DFN12 (3x3 mm) package outline...........................................................................................33
Figure 18: DFN12 (3x3 mm) recommended footprint ...............................................................................35
DocID027660 Rev 4
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L6362A arduino
L6362A
Symbol
Rth(JC)
Rth(JA)
Table 5: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient.
(FR4, Cu thick. 35 µm, 2 layers, the
exposed pad is not soldered to total
exposed area = 5 mm2)
Thermal resistance junction-ambient.
(FR4, Cu thick. 35 µm, 2 layers, the
exposed pad is soldered to total exposed
area = 5 mm2)
Thermal resistance junction-ambient.
(FR4, Cu thick. 35 µm, 2 layers, the
exposed pad has to be soldered to total
exposed area = 100 mm2 with vias )
Absolute maximum ratings
Value
2.5
Unit
200
°C/W
100
50
DocID027660 Rev 4
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