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PDF M93C66-DRE Data sheet ( Hoja de datos )

Número de pieza M93C66-DRE
Descripción MICROWIRE serial EEPROM
Fabricantes STMicroelectronics 
Logotipo STMicroelectronics Logotipo



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No Preview Available ! M93C66-DRE Hoja de datos, Descripción, Manual

M93Cx6-DRE
16-Kbit, 8-Kbit, 4-Kbit, 2-Kbit and 1-Kbit (8-bit or 16-bit wide)
MICROWIRE™ serial EEPROM 105 °C Operation
Datasheet - production data
SO8 (MN)
150 mil width
TSSOP8 (DW)
169 mil width
WFDFPN8 (MF)
2 x 3 mm
Features
Industry standard MICROWIRE™ bus
Memory array: 1 Kb, 2 Kb, 4 Kb, 8 Kb or 16 Kb
Dual organization: by word (x16) or byte (x8)
Write
– Byte within 4 ms
– Word within 4 ms
READY/BUSY signal during programming
2 MHz clock rate
Sequential read operation
Single supply voltage: 1.8 V to 5.5 V
Extended temperature range: -40 °C up to 105
°C
Enhanced ESD protection
Write cycle endurance
– 4 million Write cycles at 25 °C
– 1.2 million Write cycles at 85 °C
– 900 k Write cycle at 105°C
Data retention
– more than 50 years at 105 °C
– 200 years at 55 °C
Packages
– RoHS-compliant and Halogen-free
(ECOPACK2®)
Table 1. Device summary
Reference
Part number
M93Cx6-DRE
M93C46-DRE
M93C56-DRE
M93C66-DRE
M93C76-DRE
M93C86-DRE
November 2015
This is information on a product in full production.
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M93C66-DRE pdf
M93Cx6-DRE
List of figures
List of figures
Figure 1.
Figure 2.
Figure 3.
Figure 4.
Figure 5.
Figure 6.
Figure 7.
Figure 8.
Figure 9.
Figure 10.
Figure 11.
Figure 12.
Figure 13.
Figure 14.
Figure 15.
Figure 16.
Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
8-pin package connections (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Bus master and memory devices on the serial bus . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
M93Cx6-DRE ORG input connection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
READ, WRITE, WEN, WDS sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
WRAL sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
ERASE, ERAL sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Write sequence with one clock glitch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
AC testing input output waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Synchronous timing (Start and op-code input) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Synchronous timing (Read) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Synchronous timing (Write) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
SO8N – 8-lead plastic small outline, 150 mils body width, package outline . . . . . . . . . . . . 24
SO8N – 8-lead plastic small outline, 150 mils body width,
package recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
TSSOP8 – 8-lead thin shrink small outline, 3 x 4.4 mm, 0.5 mm pitch,
package outline. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
WFDFPN8 (MLP8) – 8-lead, 2 x 3 mm, 0.5 mm pitch very thin fine pitch
dual flat package outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
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M93C66-DRE arduino
M93Cx6-DRE
5 Instructions
Instructions
The instruction set of the M93Cx6-DRE devices contains seven instructions, as summarized
in Table 5 to Table 7. Each instruction consists of the following parts, as shown in Figure 5:
READ, WRITE, WEN, WDS sequences:
Each instruction is preceded by a rising edge on Chip Select Input (S) with Serial Clock
(C) being held low.
A start bit, which is the first ‘1’ read on Serial Data Input (D) during the rising edge of
Serial Clock (C).
Two op-code bits, read on Serial Data Input (D) during the rising edge of Serial Clock
(C). (Some instructions also use the first two bits of the address to define the op-code).
The address bits of the byte or word that is to be accessed. For the M93C46, the
address is made up of 6 bits for the x16 organization or 7 bits for the x8 organization
(see Table 5). For the M93C56 and M93C66, the address is made up of 8 bits for the
x16 organization or 9 bits for the x8 organization (see Table 6). For the M93C76 and
M93C86, the address is made up of 10 bits for the x16 organization or 11 bits for the x8
organization (see Table 7).
The M93Cx6-DRE devices are fabricated in CMOS technology and are therefore able to run
as slow as 0 Hz (static input signals) or as fast as the maximum ratings specified in “AC
characteristics” tables, in Section 11: DC and AC parameters.
Table 5. Instruction set for the M93C46
Instruction
Description
Start Op-
bit code
x8 origination (ORG = 0)
x16 origination (ORG = 1)
Address
(1)
Data
Required
clock
Address
(1)
cycles
Data
Required
clock
cycles
READ
Read Data from
Memory
1 10 A6-A0 Q7-Q0
-
A5-A0 Q15-Q0
-
WRITE
WEN
Write Data to
Memory
Write Enable
1 01 A6-A0 D7-D0 18
A5-A0 D15-D0
25
1 00 11X XXXX -
10 11 XXXX -
9
WDS
Write Disable
1
00
00X
XXXX
-
10 00 XXXX -
9
ERASE
Erase Byte or
Word
1 11 A6-A0
-
10 A5-A0 -
9
ERAL
Erase All Memory 1
00
10X
XXXX
-
10 10 XXXX -
9
WRAL
Write All Memory
with same Data
1
00
01X
XXXX
D7-D0
18
01 XXXX D15-D0
25
1. X = Don't Care bit.
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