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PDF RF5765 Data sheet ( Hoja de datos )
| Número de pieza | RF5765 | |
| Descripción | FRONT-END MODULE | |
| Fabricantes | RF Micro Devices | |
| Logotipo |  |
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RF5765
2.4GHz to 2.5GHz 802.11b/g/n WiFi
FRONT-END MODULE
Package Style: QFN, 16-pin, 3mmx3mmx0.5mm
Features
Integrated 2.4GHz to
2.45GHz b/g/n Amplifier,
LNA, SP3T Switch, and Power
Detector Coupler
Single Supply Voltage 3.0V to
4.8 V
POUT=20dBm, 11g, OFDM at
<3.3% EVM, 23dBm 11b
Meeting 11b Spectral Mask
Low Height Package, Suited
for SiP and CoB Designs
Applications
Cellular handsets
Mobile devices
Tablets
Consumer electronics
Gaming
Netbooks/Notebooks
TV/monitors/video
SmartEnergy
16 15 14 13
Tx In 1
12 N/C
Vreg 2
RX Out 3
LNA_Vcc 4
5
2Fo Filter
SP3T
11 GND
10 ANT
9 C_BT
678
Functional Block Diagram
Product Description
The RF5765 provides a complete integrated solution in a single Front End
Module (FEM) for WiFi 802.11b/g/n and Bluetooth® systems. The ultra
small form factor and integrated matching greatly reduces the number of
external components and layout area in the customer application. This
simplifies the total Front End solution by reducing the bill of materials, sys-
tem footprint, and manufacturability cost. The RF5765 integrates a
2.4GHz Power Amplifier (PA), Low Noise Amplifier (LNA), power detector
coupler for improved accuracy, and some filtering for harmonic rejection.
The RF5765 is capable of receiving WiFi and Bluetooth® simultaneously.
The device is provided in a 3mmx3mmx0.5mm, 16-pin package. This
module meets or exceeds the RF Front End needs of IEEE 802.11b/g/n
WiFi RF systems.
Ordering Information
RF5765SQ
RF5765SR
RF5765TR7
RF5765PCK-410
Standard 25 piece bag
Standard 100 piece reel
Standard 2500 piece reel (13”)
Fully Assembled Evaluation Board with 5piece Sample
DS120213
Optimum Technology Matching® Applied
GaAs HBT
SiGe BiCMOS
GaAs pHEMT
GaN HEMT
GaAs MESFET
InGaP HBT
Si BiCMOS
SiGe HBT
Si CMOS
Si BJT
RF MEMS
LDMOS
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 14
1 page  
RF5765
Parameter
Specification
Min. Typ. Max.
Unit
Condition
Other Requirements,
continued
ESD
Human Body Model 500
V EIA/JESD22-114A RF pins
1000
V EIA/JESD22-114A DC pins
Charge Device Model 500
V JESD22-C101C all pins
Note 1: The PA module must operate with gated bias voltage input at 1% to 99% duty cycle.
Note 3: Values to be agreed to upon characterization data review: current, gain, return loss, detector sensitivity and output power.
Note 4: The output power for channels 1 and 11 may be reduced to meet FCC restricted band requirements.
Switch Control Logic
Mode
VREG
C RX
C BT C BWRx
Standby
LLLL
WiFi TX
HL L L
WiFi RX
LHL L
WiFi RX/BT*
LHLH
BT RX
L LHL
BT TX
L LHL
*The FEM can be placed in receive WiFi and Bluetooth® modes simultaneously with increased insertion loss.
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 14
5 Page 
RF5765
WiFi and BLUETOOTH® RECEIVE (SIMULTANEOUS MODE)
The RF765 WiFi and Bluetooth® receive circuits were specifically designed to address issues of simultaneous operation. In this
mode both signals can be received at the same time when the C_BWRX (pin-5) is set high. The typical gain for each RF path is
approximately 13dB and a NF of 3dB. During simultaneous mode the active components are the LNA, the SPST switch, and
only the RX branch of the SP3T. Refer to the logic control table for proper settings.
Simultaneous Mode Biasing Instructions
• Connect the RF input (ANT/pin-10) to a signal generator and a spectrum analyzer at the RX (pin-3) and BT (pin-8) RF ports. A multiport VNA
may be used as well.
• Turn the LNA bias ON (pin-4) and set the voltage to 3.3V
• Set C_RX and C_BWRX high. This turns ON the receive branch of the SP3T and the SPST switch.
• The SP3T controls for the off branches (VREG and C_BT) must be set to a logic “low” (0.2V max) or grounded. In the event that one of these
branches is left floating or in a logic “high” the performance will degrade. It is recommended to terminate unused RF Ports in 50Ω.
• Turn RF ON
BLUETOOTH® MODE
The RF765 Bluetooth® only mode is implemented through the SP3T switch by setting C_BT “high.” Typical insertion loss is
about 1.2dB.
Bluetooth® Biasing Instructions
• Connect the RF input (ANT/pin-10) to a signal generator and a spectrum analyzer at the BT RF port. A VNA may be used in place of the Sig
Gen and SA.
• Set C_BT (pin-9) “high.” This turns the Bluetooth® branch of the SP3T switch ON.
• The SP3T controls for the off branches (VREG and C_RX) must be set to a logic “low” (0.2V max) or grounded. Do not leave floating.
• Terminate unused RF Ports in 50Ω
• Turn RF ON
APPLICATION CIRCUIT AND LAYOUT RECOMMENDATIONS
The RF5765 integrates the matching networks and DC blocking capacitors for all RF ports. This greatly reduces the number of
external components and layout area needed to implement this FEM. Typically only a total of four external components are
required to achieve nominal performance. However, depending on board layout and the many noise signals that could poten-
tially couple to the RF5765, additional bypassing capacitors may be required to properly filter out unwanted signals that might
degrade performance.
The LNA bias components consist of an inductor and a decoupling capacitor. The inductor value is critical to optimize NF and
return loss at the RX output. For best performance and trade off between critical parameters such as NF, Gain, and IP3, the
total inductance including board trace should be approximately 1.2nH. The 5.6kΩ series resistor for the Bluetooth® control
line helps to prevent unwanted signal from coupling to this pin. The resistor should be place as close as possible to the pack-
age pin. The last component needed in the application circuit is a low frequency bypass capacitor on the VCC line. In general, it
is good RF practice to have proper decoupling of supply lines to filter out noise. Occasionally, depending on the level of cou-
pling or parasitics of the board, a high frequency bypass capacitor must be added as well.
In order to optimize performance for both the Transmit and Receive paths, a good layout design must be implemented. In addi-
tion to designing 50 RF lines, proper grounding along the RF traces and on the FEM ground slug must be exercised. This will
minimize coupling and provide good thermal dissipation when the PA is operating at high power. For reference, the RFMD eval-
uation board uses 9 thermal ground vias (hole/capture pad 12/22mil) on the ground slug. Additionally, if space permitted, VCC
and control lines must be isolated from each other with ground vias in between them. RFMD evaluation board gerbers are
available upon request.
DS120213
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 14
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| PDF Descargar | [ Datasheet RF5765.PDF ] | |
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