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PDF IRFS7430-7PPbF Data sheet ( Hoja de datos )

Número de pieza IRFS7430-7PPbF
Descripción Power MOSFET ( Transistor )
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRFS7430-7PPbF Hoja de datos, Descripción, Manual

Application
Brushed Motor drive applications
BLDC Motor drive applications
PWM Inverterized topologies
Battery powered circuits
Half-bridge and full-bridge topologies
Electronic ballast applications
Synchronous rectifier applications
Resonant mode power supplies
OR-ing and redundant power switches
DC/DC and AC/DC converters
 D
G
S
Benefits
Improved Gate, Avalanche and Dynamic dV/dt Ruggedness
Fully Characterized Capacitance and Avalanche SOA
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free, RoHS Compliant
G
Gate
StrongIRFET™
IRFS7430-7PPbF
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID (Silicon Limited)
ID (Package Limited)
40V
0.55m
0.75m
522A
240A
D
Drain
S
Source
Base part number Package Type
IRFS7430-7PPbF D2Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFS7430-7PPbF
IRFS7430TRL7PP
4.0
ID = 100A
3.0
2.0
TJ = 125°C
1.0
0.0
4
TJ = 25°C
6 8 10 12 14 16 18 20
VGS, Gate -to -Source Voltage (V)
600
Limited By Package
500
400
300
200
100
0
25
50 75 100 125 150
TC , Case Temperature (°C)
175
Fig 1. Typical On-Resistance vs. Gate Voltage
Fig 2. Maximum Drain Current vs. Case Temperature
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IRFS7430-7PPbF pdf
 
1000
TJ = 175°C
100
10 TJ = 25°C
1
VGS = 0V
0.1
0.2
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Source-to-Drain Voltage (V)
1.6
Fig 9. Typical Source-Drain Diode Forward Voltage
48
Id = 2.0mA
47
46
45
44
43
42
41
40
-60
-20 20 60 100 140
TJ , Temperature ( °C )
180
Fig 11. Drain-to–Source Breakdown Voltage
IRFS7430-7PPbF
10000
1000
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
100
Limited by Package
10
1msec
DC
10msec
1 Tc = 25°C
Tj = 175°C
Single Pulse
0.1
0.1 1 10 100
VDS, Drain-to-Source Voltage (V)
Fig 10. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-5 0 5 10 15 20 25 30 35 40 45
VDS, Drain-to-Source Voltage (V)
Fig 12. Typical Coss Stored Energy
10.0
8.0
6.0
VGS = 5.5V
VGS = 6.0V
VGS = 7.0V
VGS = 8.0V
VGS = 10V
4.0
2.0
0.0
0
100 200 300 400
ID, Drain Current (A)
500
Fig 13. Typical On-Resistance vs. Drain Current
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November 6, 2014

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IRFS7430-7PPbF arduino
  IRFS7430-7PPbF
Qualification Information 
Qualification Level  
Moisture Sensitivity Level
RoHS Compliant
D2Pak-7Pin
Industrial
(per JEDEC JESD47F) ††
MSL1
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
Revision History
Date
11/6/2014


Comments
Updated EAS (L =1mH) = 1454mJ on page 2
Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 54A, VGS =10V”. on page 2
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 6, 2014

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