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PDF IRFS4321-7PPbF Data sheet ( Hoja de datos )
| Número de pieza | IRFS4321-7PPbF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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Application
Motion Control Applications
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
Hard Switched and High Frequency Circuits
Benefits
Low Rdson Reduces Losses
Low Gate Charge Improves the Switching Performance
Improved Diode Recovery Improves Switching &
EMI Performance
30V Gate Voltage Rating Improves Robustness
Fully Characterized Avalanche SOA
IRFS4321-7PPbF
G
D
S
HEXFET® Power MOSFET
VDSS
RDS(on) typ.
max
ID
150V
11.7m
14.7m
86A
G
Gate
D2Pak 7Pin
D
Drain
S
Source
Base part number Package Type
IRFS4321-7PPbF D2Pak-7Pin
Standard Pack
Form
Quantity
Tube
50
Tape and Reel Left
800
Orderable Part Number
IRFS4321-7PPbF
IRFS4321TRL7PP
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS (Thermally limited)
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Thermal Resistance
Parameter
RJC
Junction-to-Case
RJA Junction-to-Ambient
Max.
86
61
343
350
2.3
± 30
120
-55 to + 175
300
Units
A
W
W/°C
V
mJ
°C
Typ.
–––
–––
Max.
0.43*
40
Units
°C/W
RJC (end of life) for D2Pak and TO-262 = 0.65°C/W. This is the maximum measured value after 1000 temperature
cycles from -55 to 150°C and is accounted for by the physical wear out of the die attach medium.
Notes through are on page 2
1 www.irf.com © 2013 International Rectifier
June 14, 2013
1 page  
1
IRFS4321-7PPbF
D = 0.50
0.1 0.20
0.10
0.05
0.02
0.01 0.01
0.001
1E-006
SINGLE PULSE
( THERMAL RESPONSE )
J J
1 1
R1R1
Ci= iRi
Ci= iRi
R2R2
2 2
R3R3 Ri (°C/W) (sec)
C 0.085239 0.000052
33 0.18817 0.00098
0.176912 0.008365
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
t1 , Rectangular Pulse Duration (sec)
0.01
0.1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
10 0.05
0.10
Allowed avalanche Current vs avalanche
1 pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
tav (sec)
1.0E-03
Fig 14. Typical Avalanche Current vs. Pulse width
1.0E-02
1.0E-01
120
TOP
Single Pulse
BOTTOM 1% Duty Cycle
100 ID = 50A
80
60
40
20
0
25
50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures
23a, 23b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage
increase during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax
(assumed as 25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC
Iav = 2T/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2013 International Rectifier
June 14, 2013
5 Page | ||
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| PDF Descargar | [ Datasheet IRFS4321-7PPbF.PDF ] | |
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