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PDF IRFS3107-7PPBF Data sheet ( Hoja de datos )
| Número de pieza | IRFS3107-7PPBF | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | International Rectifier | |
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IRFS3107-7PPbF
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
G
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
l Lead-Free
HEXFET® Power MOSFET
D VDSS
75V
RDS(on) typ.
2.1mΩ
max. 2.6mΩ
ID 260A
S
ID (Package Limited)
240A
D
S
SS
S
S
G
D2Pak 7 Pin
G
Gate
D
Drain
S
Source
Absolute Maximum Ratings
Symbol
Parameter
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Package Limited)
cPulsed Drain Current
PD @TC = 25°C Maximum Power Dissipation
Linear Derating Factor
VGS
dv/dt
Gate-to-Source Voltage
ePeak Diode Recovery
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
EAS (Thermally limited)
IAR
EAR
dSingle Pulse Avalanche Energy
cAvalanche Current
fRepetitive Avalanche Energy
Thermal Resistance
Symbol
RθJC
RθJA
Parameter
jkJunction-to-Case
ijJunction-to-Ambient (PCB Mount)
Max.
260
190
240
1060
370
2.5
± 20
13
-55 to + 175
300
x x10lb in (1.1N m)
320
See Fig. 14, 15, 22a, 22b,
Typ.
–––
–––
Max.
0.40
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
January 28, 2014
1 page  
IRFS3107-7PPbF
1
D = 0.50
0.1 0.20
0.01
0.10
0.05
0.02
0.01
0.001
1E-006
τJ τJ
τ1 τ1
R1R1
SINGLE PULSE
( THERMAL RESPONSE )
CiC= iτi/Ri/iRi
R2R2
τ2 τ2
R3R3
R4R4
τCτ
Ri (°C/W)
0.01083
0.05878
τi (sec)
0.00001
0.000086
τ3 τ3
τ4 τ4
0.15777 0.001565
0.17478 0.011192
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
Duty Cycle = Single Pulse
100 0.01
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
0.05
10 0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
1.0E-01
350
TOP
Single Pulse
300 BOTTOM 1.0% Duty Cycle
ID = 160A
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ∆T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
January 28, 2014
5 Page | ||
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| PDF Descargar | [ Datasheet IRFS3107-7PPBF.PDF ] | |
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