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PDF F1B2CAI Data sheet ( Hoja de datos )
| Número de pieza | F1B2CAI | |
| Descripción | STACK SILICON DIFFUSED DIODE | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
F1B2CCI/CAI
STACK SILICON DIFFUSED DIODE
HIGH SPEED RECTIFIER APPLICATION.
FEATURES
ᴌAverage Output Rectified Current : IO=10A(Tc=101ᴱ).
ᴌRepetitive Peak Reverse Voltage : VRRM=200V.
ᴌRectifier Stack of Single Phase Center Tap Type.
POLARITY
ᴌCC TYPE
ᴌCATHODE COMMON
13
ᴌCA TYPE
ᴌANODE COMMON
13
22
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
Repetitive Peak
Reverse Voltage
F1B2CCI
F1B2CAI
Average Output Rectified
Current (Tc=101ᴱ) (Fig.)
Peak One Cycle Surge Forward
Current (Non-Repetitive)
Junction Temperature
Storage Temperature Range
SYMBOL
VRRM
IO
IFSM
Tj
Tstg
RATING
200
10
60 (50Hz)
70 (60Hz)
-40ᴕ150
-40ᴕ150
UNIT
V
A
A
ᴱ
ᴱ
A
U
E
S
T
LL
M
DD
NN
T
T
123
C
DIM
A
B
C
D
E
F
G
RH
J
K
L
VM
N
O
P
Q
HR
S
T
U
V
MILLIMETERS
10.30 MAX
15.30 MAX
2.70Ź0.30
0.85 MAX
Ѹ3.20Ź0.20
3.00Ź0.30
12.30 MAX
0.75 MAX
13.60Ź0.50
3.90 MAX
1.20
1.30
2.54
4.50Ź0.20
6.80
2.60Ź0.20
10Ɓ
25Ş
5Ş
0.5
2.60Ź0.15
CC TYPE
1. ANODE
2. CATHODE COM
3. ANODE
CA TYPE
1. CATHODE
2. ANODE COM
3. CATHODE
TO-220IS
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Peak Forward Voltage (Note)
Repetitive Peak Reverse Current (Note)
Reverse Recovery Time
VFM
IRRM
trr
Thermal Resistance
Note : A Value of one cell.
Rth(j-c)
TEST CONDITION
IFM=5A
VRRM=Rated
IF=0.1A, IR=0.1A
Junction to Case
MIN.
-
-
-
-
TYP.
-
-
-
-
MAX.
1.4
10
400
3.5
UNIT
V
ỌA
nS
ᴱ/W
Fig. EXAMPLE OF RECTIFING CIRCUIT
I O =10A
LOAD
RECTIFIER STACK
1997. 12. 2
Revision No : 2
1/2
1 page | ||
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| PDF Descargar | [ Datasheet F1B2CAI.PDF ] | |
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