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PDF VS-HFA16TB120PbF Data sheet ( Hoja de datos )

Número de pieza VS-HFA16TB120PbF
Descripción Ultrafast Soft Recovery Diode
Fabricantes Vishay 
Logotipo Vishay Logotipo



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www.vishay.com
VS-HFA16TB120PbF, VS-HFA16TB120-N3
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 16 A
TO-220AC
Base
cathode
2
13
Cathode Anode
PRODUCT SUMMARY
Package
IF(AV)
VR
VF at IF
trr typ.
TJ max.
Diode variation
TO-220AC
16 A
1200 V
3.0 V
30 ns
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified according to
JEDEC-JESD47
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA16TB120... is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction and
advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 V and 16 A continuous current,
the VS-HFA16TB120... is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition
to ultrafast recovery time, the HEXFRED® product line
features extremely low values of peak recovery current
(IRRM) and does not exhibit any tendency to “snap-off”
during the tb portion of recovery. The HEXFRED features
combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the
switching transistor. These HEXFRED advantages can help
to significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA16TB120... is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
SYMBOL
VR
IF
IFSM
IFRM
Maximum power dissipation
PD
Operating junction and storage temperature range TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
1200
16
190
64
151
60
- 55 to + 150
UNITS
V
A
W
°C
Revision: 18-Aug-11
1 Document Number: 94060
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

1 page




VS-HFA16TB120PbF pdf
www.vishay.com
VS-HFA16TB120PbF, VS-HFA16TB120-N3
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
0.75 IRRM
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 18-Aug-11
5 Document Number: 94060
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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