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PDF VS-HFA15TB60SPbF Data sheet ( Hoja de datos )
| Número de pieza | VS-HFA15TB60SPbF | |
| Descripción | Ultrafast Soft Recovery Diode | |
| Fabricantes | Vishay | |
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www.vishay.com
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF
Vishay Semiconductors
HEXFRED®,
Ultrafast Soft Recovery Diode, 15 A
TO-263AB (D2PAK)
VS-HFA15 TB60SPbF
Base
cathode
2
TO-262AA
VS-HFA15 TB60-1PbF
2
1
N/C
3
Anode
13
N/C Anode
PRODUCT SUMMARY
Package
TO-263AB (D2PAK), TO-262AA
IF(AV)
VR
15 A
600 V
VF at IF
1.2 V
trr (typ.)
23 ns
TJ max.
Diode variation
150 °C
Single die
FEATURES
• Ultrafast and ultrasoft recovery
• Very low IRRM and Qrr
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• Designed and qualified for industrial level
• AEC-Q101 qualified
• Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF is a state of
the art ultrafast recovery diode. Employing the latest in
epitaxial construction and advanced processing techniques
it features a superb combination of characteristics which
result in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600 V and
15 A continuous current, the VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED® product line features
extremely low values of peak recovery current (IRRM) and
does not exhibit any tendency to “snap-off” during the tb
portion of recovery. The HEXFRED features combine to offer
designers a rectifier with lower noise and significantly lower
switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED VS-HFA15TB60SPbF,
VS-HFA15TB60-1PbF is ideally suited for applications in
power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications
where high speed, high efficiency is needed.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC = 100 °C
TC = 25 °C
TC = 100 °C
VALUES
600
15
150
60
74
29
-55 to +150
UNITS
V
A
W
°C
Revision: 10-Jul-15
1 Document Number: 94054
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
VS-HFA15TB60SPbF, VS-HFA15TB60-1PbF
Vishay Semiconductors
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(4) Qrr - area under curve defined by trr
and IRRM
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 10-Jul-15
5 Document Number: 94054
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet VS-HFA15TB60SPbF.PDF ] | |
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