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PDF KIC7S08FU Data sheet ( Hoja de datos )

Número de pieza KIC7S08FU
Descripción 2-INPUT AND GATE
Fabricantes KEC 
Logotipo KEC Logotipo



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SEMICONDUCTOR
TECHNICAL DATA
2-INPUT AND GATE
The KIC7S08FU is a high speed C2MOS 2-INPUT AND GATE
fabricated with silicon gate C2MOS technology.
It achieves high speed operation similar to equivalent LSTTL while
maintaining the C2MOS low power dissipation.
The internal circuit is composed of 2 stages including buffer output,
which enables high noise immunity and stable output.
All inputs are equipped with protection circuits against static discharge
or transient excess voltage.
FEATURES
High Speed : tpd=7ns(Typ.) at VCC=5V.
Low Power Dissipation : ICC=1 A(Max.) at Ta=25 .
High Noise Immunity : VNIH=VNIL=28% VCC(Min.).
Output Drive Capability : 5 LSTTL Loads.
Symmetrical Output Impedance : | IOH | =IOL=2mA(Min.)
Balanced Propagation Delays : tpLH tpHL
Wide Operating Voltage Range : VCC(opr)=2 6V.
KIC7S08FU
SILICON MONOLITHIC CMOS
DIGITAL INTEGRATED CIRCUIT
B
B1
1 5 DIM MILLIMETERS
A 2.00+_ 0.20
2 A1 1.3+_ 0.1
B 2.1+_ 0.1
3
4D
B1
1.25+_ 0.1
C 0.65
D 0.2+0.10/-0.05
G 0-0.1
H 0.9 +_ 0.1
T 0.15+0.1/-0.05
T
G
USV
MAXIMUM RATINGS (Ta=25 )
CHARACTERISTIC
SYMBOL
Supply Voltage Range
DC Input Voltage
DC Output Voltage
Input Diode Current
Output Diode Current
DC Output Current
DC VCC/Ground Current
Power Dissipation
Storage Temperature
Lead Temperature (10s)
VCC
VIN
VOUT
IIK
IOK
IOUT
ICC
PD
Tstg
TL
RATING
-0.5 7
-0.5 VCC+0.5
-0.5 VCC+0.5
20
20
12.5
25
200
-65 150
260
UNIT
V
V
V
mA
mA
mA
mA
mW
MARKING
STType Name
Lot No.
PIN CONNECTION (TOP VIEW)
IN B 1
IN A 2
GND 3
5 VCC
4 OUT Y
2008 .9. 17
Revision No : 4
1/3

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