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Número de pieza | F12NM50N | |
Descripción | N-channel Power MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de F12NM50N (archivo pdf) en la parte inferior de esta página. Total 19 Páginas | ||
No Preview Available ! STB12NM50N,STD12NM50N,STI12NM50N
STF12NM50N, STP12NM50N
N-channel 500 V, 0.29 Ω, 11 A MDmesh™ II Power MOSFET
TO-220 - DPAK - D2PAK - I2PAK - TO-220FP
Features
Type
VDSS
(@Tjmax)
RDS(on)
max
ID
STB12NM50N
t(s)STD12NM50N
cSTI12NM50N
uSTF12NM50N
rodSTP12NM50N
550 V
550 V
550 V
550 V
550 V
0.38 Ω
0.38 Ω
0.38 Ω
0.38 Ω
0.38 Ω
11 A
11 A
11 A
11 A (1)
11 A
P■ 100% avalanche tested
te■ Low input capacitance and gate charge
le■ Low gate input resistance
bsoApplication
- O■ Switching applications
t(s)Description
ucThis series of devices is realized with the second
dgeneration of MDmesh™ technology. This
rorevolutionary Power MOSFET associates a new
Pvertical structure to the company’s strip layout to
teyield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
Obsoledemanding high efficiency converters.
3
2
1
TO-220
3
1
DPAK
3
1
D²PAK
123
I²PAK
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB12NM50N
B12NM50N
STD12NM50N
D12NM50N
STI12NM50N
I12NM50N
STF12NM50N
STP12NM50N
F12NM50N
P12NM50N
Package
D²PAK
DPAK
I²PAK
TO-220FP
TO-220
Packaging
Tape and reel
Tape and reel
Tube
Tube
Tube
July 2008
Rev 8
1/19
www.st.com
19
1 page STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Electrical characteristics
Table 7. Switching times
Symbol
Parameter
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Test conditions
Min Typ. Max Unit
VDD=250 V, ID= 5.5 A,
RG=4.7 Ω, VGS=10 V
(see Figure 16)
15
15
60
14
ns
ns
ns
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min Typ. Max Unit
)ISD
t(sISDM(1)
ducVSD(2)
rotrr
PQrr
teIRRM
oletrr
bsQrr
OIRRM
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD=11 A, VGS=0
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A, VDD=100 V
di/dt = 100 A/µs,
(see Figure 18)
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD=11 A,
di/dt = 100 A/µs,
VDD=100 V, Tj=150 °C
(see Figure 18)
11 A
44 A
1.3 V
340 ns
3.5 µC
20 A
420 ns
4 µC
20 A
) -1. Pulse width limited by safe operating area
Obsolete Product(s2. Pulsed: pulse duration=300 µs, duty cycle 1.5%
5/19
5 Page STB12NM50N - STD12NM50N - STI/F12NM50N - STP12NM50N
Package mechanical data
TO-220 mechanical data
mm inch
Dim
Min Typ Max Min Typ Max
A 4.40
4.60 0.173
0.181
b 0.61
0.88 0.024
0.034
b1 1.14
c 0.48
1.70 0.044
0.70 0.019
0.066
0.027
D 15.25
15.75
0.6
0.62
D1 1.27
0.050
)E 10
10.40
0.393
0.409
t(se 2.40
2.70 0.094
0.106
e1 4.95
5.15 0.194
0.202
ucF 1.23
1.32 0.048
0.051
dH1 6.20
6.60 0.244
0.256
roJ1 2.40
2.72 0.094
0.107
L 13
14 0.511
0.551
PL1 3.50
3.93 0.137
0.154
teL20 16.40
0.645
leL30 28.90
1.137
∅P 3.75
3.85 0.147
0.151
Obsolete Product(s) - ObsoQ 2.65
2.95 0.104
0.116
11/19
11 Page |
Páginas | Total 19 Páginas | |
PDF Descargar | [ Datasheet F12NM50N.PDF ] |
Número de pieza | Descripción | Fabricantes |
F12NM50N | N-channel Power MOSFET | STMicroelectronics |
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