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PDF IRFF420 Datasheet ( Hoja de datos )

Número de pieza IRFF420
Descripción HEXFET TRANSISTORS
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

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IRFF420 Hoja de datos, Descripción, Manual
PD - 90429D
IRFF420
JANTX2N6794
REPETITIVE AVALANCHE AND dv/dt RATED
JANTXV2N6794
HEXFET®TRANSISTORS
REF:MIL-PRF-19500/555
THRU-HOLE (TO-205AF)
500V, N-CHANNEL
Product Summary
Part Number BVDSS
IRFF420
500V
RDS(on)
3.0
ID
1.5A
The HEXFET®technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
T0-39
Features:
n Repetitive Avalanche Ratings
n Dynamic dv/dt Rating
n Hermetically Sealed
n Simple Drive Requirements
n Ease of Paralleling
Absolute Maximum Ratings
Parameter
ID @ VGS = 10V, TC = 25°C
ID @ VGS = 10V, TC = 100°C
IDM
PD @ TC = 25°C
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current 
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy ‚
Avalanche Current 
Repetitive Avalanche Energy 
Peak Diode Recovery dv/dt ƒ
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
1.5
1.0
6.0
20
0.16
±20
0.242
2.2
2.0
3.5
-55 to 150
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. (1.6mm) from case for 10s)
0.98(typical)
g
For footnotes refer to the last page
www.irf.com
1
08/06/07

1 page

IRFF420 pdf
IRFF420, JANTX2N6794, JANTXV2N6794
Fig9. MaximumDrainCurrentVs.
CaseTemperature
VDS
VGS
RG
RD
D.U.T.
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
Fig11. MaximumEffectiveTransientThermalImpedance,Junction-to-Case
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