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PDF 1214GN-400LV Data sheet ( Hoja de datos )
| Número de pieza | 1214GN-400LV | |
| Descripción | Broad Band | |
| Fabricantes | Microsemi | |
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1214GN-400LV
400 Watts - 50 Volts, 4.5ms, 30%
Broad Band 1200 - 1400 MHz
GENERAL DESCRIPTION
The 1214GN-400LV is an internally matched, COMMON SOURCE,
class AB GaN on SiC HEMT transistor capable of providing over 16dB
gain, 400 Watts of pulsed RF output power at 4.5ms pulse width, 30%
duty factor across the 1200 to 1400 MHz band. The transistor has
internal pre-match for optimal performance. This hermetically sealed
transistor is designed for L-Band Radar applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C
800 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS)
150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG)-55 to +125 C
Operating Junction Temperature +250 C
CASE OUTLINE
55-KR
Common Source
ELECTRICAL CHARACTERISTICS @ 25C
Symbol
Pout
Gp
d
Dr
VSWR-T
Өjc
Characteristics
Output Power
Power Gain
Drain Efficiency
Droop
Load Mismatch Tolerance
Thermal Resistance
Test Conditions
Pout=400W, Freq=1200, 1300, 1400 MHz
Pout=400W, Freq=1200, 1300, 1400 MHz
Pout=400W, Freq=1200, 1300, 1400 MHz
Pout=400W, Freq=1200, 1300, 1400 MHz
Pout=400W, Freq=1200 MHz
Pulse Width=4.5mS, Duty=30%
Min Typ Max Units
400 W
16 16.8
dB
60 68
%
0.6 dB
3:1
0.3 °C/W
Bias Condition: Vdd=+50V, Idq=200mA average current (Vgs= -2.0 ~ -4.5V ) with constant
gate Bias
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off)
Drain leakage current
VgS = -8V, VD = 50V
16.8
mA
IG(Off)
Gate leakage current
VgS = -8V, VD = 0V
2 mA
BVDSS
Drain-source breakdown
voltage
Vgs =-8V, ID = 28mA
150
V
Export Classification: EAR -99
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
1 page  
1214GN-400LV
400 Watts - 50 Volts, 4.5ms, 30%
Broad Band 1200 - 1400 MHz
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
copied, published, uploaded, posted, transmitted, distributed or disclosed or used without the express duly signed written consent of
Microsemi If the recipient of this document has entered into a disclosure agreement with Microsemi, then the terms of such
Agreement will also apply . This document and the information contained herein may not be modified, by any person other than
authorized personnel of Microsemi. No license under any patent, copyright, trade secret or other intellectual property right is
granted to or conferred upon you by disclosure or delivery of the information, either expressly, by implication, inducement, estoppels
or otherwise. Any license under such intellectual property rights must be approved by Microsemi in writing signed by an officer of
Microsemi.
Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
critical equipment or applications. Microsemi assumes no liability whatsoever, and Microsemi disclaims any express or implied
warranty, relating to sale and/or use of Microsemi products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright or other intellectual property right. The product is subject to other terms and
conditions which can be located on the Web at http://www.microsemi.com/legal/tnc.asp.
Revision History
Revision Level / Date
0.2/ April 9, 2014
-
Para. Affected
Initial Preliminary Release
Description
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
5 Page | ||
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