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PDF DF2B6.8CT Data sheet ( Hoja de datos )
| Número de pieza | DF2B6.8CT | |
| Descripción | Diode ( Rectifier ) | |
| Fabricantes | Toshiba Semiconductor | |
| Logotipo |  |
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TOSHIBA Diodes for Protecting against ESD
DF2B6.8CT
DF2B6.8CT
Product for Use Only as Protection against Electrostatic Discharge (ESD)
*This product is for protection against electrostatic discharge (ESD) only
and is not intended for any other usage, including without limitation,
the constant voltage diode application.
0.6±0.05
Unit in mm
Abusolute Maximum Ratings (Ta = 25°C)
Characteristic
Power dissipation
Junction temperature
Storage temperature range
Symbol
P
Tj
Tstg
Rating
150*
150
−55 to 150
Unit
mW
°C
°C
0.38
+0.02
-0.03
0.5±0.03
0.05±0.03
*: Mounted on a glass epoxy circuit board of 20 mm × 20 mm,
pad dimension of 4 mm × 4 mm.
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba
Semiconductor Reliability Handbook (“Handling Precautions”/
“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
CST2
JEDEC
JEITA
TOSHIBA
―
―
1-1P1A
Weight: 0.7 mg (typ.)
Electrical Characteristics (Ta = 25°C)
Characteristic
Reverse stand-off voltage
Reverse breakdown voltage
Reverse current
Total capacitance
Symbol
VRWM
VR
IR
CT
Test Condition
―
IR = 1 mA
VRWM = 5 V
VR = 0 V, f = 1 MHz
Min Typ. Max Unit
― ― 5.0 V
5.8 6.8 7.8
V
― ― 0.5 μA
― 15 ― pF
Marking
Equivalent Circuit (top view)
YZ
1 2009-06-22
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet DF2B6.8CT.PDF ] | |
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