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PDF IRGP4690D-EPBF Data sheet ( Hoja de datos )

Número de pieza IRGP4690D-EPBF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRGP4690D-EPBF Hoja de datos, Descripción, Manual

IRGP4690DPbF
IRGP4690D-EPbF
VCES = 600V
IC = 90A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.70V @ IC = 75A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
GC E
TO-247AC
IRGP4690DPbF
C
Collector
GC E
TO-247AD
IRGP4690D-EP
E
Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4690DPbF
IRGP4690D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4690DPbF
IRGP4690D-EPbF
Absolute Maximum Ratings
Parameter
VCES Collector-to-Emitter Voltage
IC @ TC = 25°C
Continuous Collector Current
IC @ TC = 100°C
ICM
ILM
Continuous Collector Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
IF @ TC = 25°C
Diode Continous Forward Current
IF @ TC = 100°C
IFM
Diode Continous Forward Current
fDiode Maximum Forward Current
VGE Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
Maximum Power Dissipation
PD @ TC = 100°C
Maximum Power Dissipation
TJ Operating Junction and
TSTG Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
dJunction-to-Case (IGBT)
dJunction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Max.
600
140
90
225
300
70
45
300
±20
±30
454
227
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.33
1.0
–––
40
Units
V
A
V
W
°C
Units
°C/W
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IRGP4690D-EPBF pdf
IRGP4690DPbF/IRGP4690D-EPbF
12000
10000
8000
6000
EON
4000
2000
EOFF
0
0 25 50 75 100 125 150
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
11000
1000
tdOFF
100 tF
tdON
tR
10
0
50 100
IC (A)
150
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
10000
9000
7000
5000
3000
EON
EOFF
1000
tdOFF
100 tR
tdON
tF
1000
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
35
10
0
20 40 60 80 100 120
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 400V, ICE = 75A; VGE = 15V
30
30 RG = 5.0Ω
25
RG = 10Ω
25
20 RG = 47Ω
15 RG = 100Ω
10
20 40 60 80 100 120 140
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
160
20
15
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
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Submit Datasheet Feedback November 14, 2014

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IRGP4690D-EPBF arduino
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4690DPbF/IRGP4690D-EPbF
TO-247AD Part Marking Information
EXAMPLE: T HIS IS AN IRGP30B120KD-E
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN T HE AS S EMBLY LINE "H"
Note: "P" in as sembly line position
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
035H
56 57
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier
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November 14, 2014

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