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PDF IRGP4650DPBF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4650DPBF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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IRGP4650DPbF
IRGP4650D-EPbF
VCES = 600V
IC = 50A, TC = 100°C
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
CC
C
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.60V @ IC = 35A
Applications
• Industrial Motor Drive
• Inverters
• UPS
• Welding
G
E
n-channel
G
Gate
GC E
TO-247AC
IRGP4650DPbF
C
Collector
GC E
TO-247AD
IRGP4650D-EP
E
Emitter
Features
Low VCE(ON) and Switching Losses
Square RBSOA and Maximum Junction Temperature 175°C
Positive VCE (ON) Temperature Coefficient
5μs short circuit SOA
Lead-Free, RoHS compliant
Benefits
High efficiency in a wide range of applications and switching
frequencies
Improved reliability due to rugged hard switching performance
and higher power capability
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Base part number
IRGP4650DPbF
IRGP4650D-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable part number
IRGP4650DPbF
IRGP4650D-EPbF
Absolute Maximum Ratings
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
RθCS
RθJA
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
fDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Parameter
dJunction-to-Case (IGBT)
dJunction-to-Case (Diode)
Case-to-Sink (flat, greased surface)
Junction-to-Ambient (typical socket mount)
Max.
600
76
50
105
140
76
50
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
Typ.
Max.
––– ––– 0.56
––– –––
1.0
––– 0.24 –––
––– –––
40
Units
V
A
V
W
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 17, 2014
1 page  
IRGP4650DPbF/IRGP4650D-EPbF
4000
3500
3000
2500
2000
EON
1500
1000
EOFF
500
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
3000
1000
tdOFF
100
tF
tdON
10
0
tR
10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
2500
2000
1500
1000
EON
EOFF
tdOFF
100
tF
tdON
tR
500
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
35
10
0
10 20 30 40 50
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
26
30 RG = 10Ω
24
25 RG = 22Ω
20 RG = 47Ω
22
20
18
15
RG = 100Ω
10
10 20 30 40 50 60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
70
16
14
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 17, 2014
5 Page 
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4650DPbF/IRGP4650D-EPbF
TO-247AD Part Marking Information
EXAMPLE: T HIS IS AN IRGP30B120KD-E
WIT H AS S EMBLY
LOT CODE 5657
AS S EMBLED ON WW 35, 2000
IN T HE AS S EMBLY LINE "H"
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
035H
56 57
PART NUMBER
DAT E CODE
YEAR 0 = 2000
WEEK 35
LINE H
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
November 17, 2014
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet IRGP4650DPBF.PDF ] | |
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