|
|
PDF IRGP4069D-EPbF Data sheet ( Hoja de datos )
| Número de pieza | IRGP4069D-EPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de IRGP4069D-EPbF (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
|
No Preview Available !
PD - 97425
IRGP4069DPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP4069D-EPbF
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 5 μS short circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
C
G
E
n-channel
VCES = 600V
IC(Nominal) = 35A
tSC ≥ 5μs, TJ(max) = 175°C
VCE(on) typ. = 1.6V
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE = 15V
cClamped Inductive Load Current, VGE = 20V
Diode Continous Forward Current
Diode Continous Forward Current
dDiode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθJC (Diode)
Parameter
fThermal Resistance Junction-to-Case-(each IGBT)
fThermal Resistance Junction-to-Case-(each Diode)
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface)
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount)
1
CC
GC E
TO-247AC
IRGP4069DPbF
GC E
TO-247AD
IRGP4069D-EPbF
G
Gate
C
Collector
E
Emitter
Max.
600
76
50
35
105
140
76
50
140
±20
±30
268
134
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
–––
Max.
0.56
1.0
–––
40
Units
°C/W
www.irf.com
10/2/09
1 page  
IRGP4069DPbF/IRGP4069D-EPbF
4000
1000
3500
3000
2500
2000
EON
1500
1000
EOFF
500
0
0 10 20 30 40 50 60 70
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
3000
tdOFF
100
tF
tdON
10
0
tR
10 20 30 40 50 60 70
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 400V, RG = 10Ω; VGE = 15V
1000
2500
2000
1500
1000
EON
EOFF
tdOFF
100
tF
tdON
tR
500
0
25 50 75 100
Rg (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
35
10
0
10 20 30 40 50
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 210μH; VCE = 400V, ICE = 35A; VGE = 15V
26
30 RG = 10Ω
25 RG = 22Ω
20 RG = 47Ω
15
RG = 100Ω
10
10 20 30 40 50 60
IF (A)
Fig. 17 - Typ. Diode IRR vs. IF
TJ = 175°C
70
24
22
20
18
16
14
0
20 40 60 80
RG (Ω)
Fig. 18 - Typ. Diode IRR vs. RG
TJ = 175°C
100
www.irf.com
5
5 Page 
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)
IRGP4069DPbF/IRGP4069D-EPbF
TO-247AD Part Marking Information
@Y6HQG@) UCDTÃDTÃ6IÃDSBQ"7 !F9@
XDUCÃ6TT@H7G`Ã
GPUÃ8P9@Ã$%$&
6TT@H7G@9ÃPIÃXXÃ"$Ã!
DIÃUC@Ã6TT@H7G`ÃGDI@ÃÅCÅ
Ir)ÃÅQÅÃvÃhriyÃyvrÃvv
vqvphrÃÅGrhqA
rrÅ
DIU@SI6UDPI6G
S@8UDAD@S
GPBP
6TT@H7G`
GPUÃ8P9@
Ã"$C
$%ÃÃÃÃÃÃÃÃÃÃÃ$&
Q6SUÃIVH7@S
96U@Ã8P9@
`@6SÃÃ2Ã!
X@@FÃ"$
GDI@ÃC
TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
www.irf.com
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 10/09
11
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRGP4069D-EPbF.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| IRGP4069D-EPbF | INSULATED GATE BIPOLAR TRANSISTOR | International Rectifier |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |