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PDF IRGIB10B60KD1P Data sheet ( Hoja de datos )
| Número de pieza | IRGIB10B60KD1P | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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PD - 94913
IRGIB10B60KD1P
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
C
Features
• Low VCE (on) Non Punch Through IGBT Technology.
• Low Diode VF.
• 10µs Short Circuit Capability.
• Square RBSOA.
• Ultrasoft Diode Reverse Recovery Characteristics.
• Positive VCE (on) Temperature Coefficient.
• Maximum Junction Temperature Rated at 175°C
• Lead-Free
Benefits
• Benchmark Efficiency for Motor Control.
G
E
n-channel
• Rugged Transient Performance.
• Low EMI.
• Excellent Current Sharing in Parallel Operation.
VCES = 600V
IC = 10A, TC=100°C
tsc > 10µs, TJ=150°C
VCE(on) typ. = 1.7V
Absolute Maximum Ratings
Parameter
VCES
Collector-to-Emitter Voltage
IC @ TC = 25°C Continuous Collector Current
IC @ TC = 100°C Continuous Collector Current
cICM Pulse Collector Current (Ref.Fig.C.T.5)
ILM Clamped Inductive Load current
IF @ TC = 25°C Diode Continuous Forward Current
IF @ TC = 100°C Diode Continuous Forward Current
IFM Diode Maximum Forward Current
VISOL
RMS Isolation Voltage, Terminal to Case, t = 1 min
VGE Gate-to-Emitter Voltage
PD @ TC = 25°C Maximum Power Dissipation
PD @ TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
Soldering Temperature for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal / Mechanical Characteristics
Parameter
RθJC Junction-to-Case- IGBT
RθJC Junction-to-Case- Diode
RθCS
Case-to-Sink, flat, greased surface
RθJA Junction-to-Ambient, typical socket mount
Wt Weight
www.irf.com
TO-220
Full-Pak
Max.
600
16
10
32
32
16
10
32
2500
±20
44
22
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf.in (1.1N.m)
Units
V
A
V
W
°C
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
0.50
–––
2.0
Max.
3.4
5.3
–––
62
–––
Units
°C/W
g
1
12/29/03
1 page  
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 20A
10 15
VGE (V)
20
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
IRGIB10B60KD1P
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 20A
10 15
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
20
18
16
14
12
10
8
6
4
2
0
5
ICE = 5.0A
ICE = 10A
ICE = 20A
10 15
VGE (V)
20
Fig. 11 - Typical VCE vs. VGE
TJ = 150°C
www.irf.com
100
90 TJ = 25°C
80 TJ = 150°C
70
60
50
40
30
20 TJ = 150°C
10
TJ = 25°C
0
0 5 10 15
VGE (V)
20
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
5
5 Page 
600
500
400
300
200
100
0
-100
tf
Vce
90% Ice
5% Vce
5% Ice
Ice
Eoff Loss
15
12.5
10
7.5
5
2.5
0
-2.5
-200
0.4
0.6 0.8
Time (uS)
1
-5
1.2
Fig. WF1- Typ. Turn-off Loss Waveform
@ TJ = 150°C using Fig. CT.4
100
0
-100
QRR
tRR
15
10
5
-200 0
-300
-400
Peak
IRR
10% Peak
IRR
-5
-10
-500 -15
-600 -20
0.20
0.30
0.40
0.50
0.60
Time (uS)
Fig. WF3- Typ. Diode Recovery Waveform
@ TJ = 150°C using Fig. CT.4
www.irf.com
IRGIB10B60KD1P
600 30
500
tr Vce
25
Ice
400 20
90% Ice
300
10% Ice
15
200 10
100 5
5% Vce
0
-100
0.05
Eon
Loss
0.15
0.25
Time (uS)
0
0.35
-5
Fig. WF2- Typ. Turn-on Loss Waveform
@ TJ = 150°C using Fig. CT.4
400 200
300 150
200 100
100 50
0
0.00
10.00
20.00 30.00
Time (uS)
40.00
0
50.00
Fig. WF4- Typ. S.C Waveform
@ TC = 150°C using Fig. CT.3
11
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| PDF Descargar | [ Datasheet IRGIB10B60KD1P.PDF ] | |
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