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PDF IRG8P60N120KDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG8P60N120KDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 1200V
IC = 60A, TC =100°C
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 40A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
CE
G
E
GC
IRG8P60N120KDPbF IRG8P60N120KD‐EPbF
TO‐247AC
TO‐247AD
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P60N120KDPbF
IRG8P60N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
100
60
120
160
50
30
160
±30
420
170
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case (IGBT)
Thermal Resistance Junction-to-Case (Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.3
0.8
–––
–––
Units
V
A
V
W
C
Units
°C/W
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October 30, 2014
1 page  
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
25
VCC = 600V
Tj = 150°C
24 VGE = 15V
IF = 40A
RG = 5
RG = 10
23 RG =
RG = 27
22
21
200 400 600 800 1000 1200 1400
diF /dt (A/µs)
Fig. 12 - Typ. IRR vs. di/dt
4000
3500
3000
2500
RG = 5.0
RG = 10
RG = 22
RG = 27
2000
1500
1000
500
0
20 30 40 50 60 70 80
IF (A)
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
1000
100
-40°C
25°C
150°C
10
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 30, 2014
5 Page 
IRG8P60N120KDPbF/IRG8P60N120KD-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial
(per JEDEC JESD47F) ††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
Submit Datasheet Feedback
October 30, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG8P60N120KDPbF.PDF ] | |
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