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PDF IRG8P50N120KDPbF Data sheet ( Hoja de datos )
| Número de pieza | IRG8P50N120KDPbF | |
| Descripción | INSULATED GATE BIPOLAR TRANSISTOR | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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VCES = 1200V
IC = 50A, TC =100°C
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 35A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
G
E
n-channel
GC E
GC E
IRG8P50N120KDPbF IRG8P50N120KD‐EPbF
TO‐247AC
TO‐247AD
G
Gate
C
Collector
E
Emitter
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
Benefits
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P50N120KDPbF
IRG8P50N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
80
50
105
140
45
25
140
±30
350
140
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
0.36
0.83
–––
–––
Units
V
A
V
W
C
Units
°C/W
1 www.irf.com © 2014 International Rectifier
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October 30, 2014
1 page  
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
30
VCC = 600V
Tj = 150°C
28 VGE = 15V
IF = 35A
26
RG = 5
24
22
20
200
RG = 10
RG =
RG = 27
600 1000 1400 1800 2200
diF /dt (A/µs)
Fig. 12 - Typ. IRR vs. di/dt
1000
100
-40°C
25°C
150°C
1900
1700
1500
1300
RG = 5.0
RG = 10
RG = 22
RG = 27
1100
900
700
500
10 20 30 40 50 60
IF (A)
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
70
10
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 14 - Typ. Diode Forward Voltage Drop
Characteristics
5 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
October 30, 2014
5 Page 
IRG8P50N120KDPbF/IRG8P50N120KD-EPbF
Qualification Information†
Qualification Level
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial†
(per JEDEC JESD47F) ††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
Submit Datasheet Feedback
October 30, 2014
11 Page | ||
| Páginas | Total 11 Páginas | |
| PDF Descargar | [ Datasheet IRG8P50N120KDPbF.PDF ] | |
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