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PDF IRG8P15N120KD-EPbF Data sheet ( Hoja de datos )

Número de pieza IRG8P15N120KD-EPbF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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No Preview Available ! IRG8P15N120KD-EPbF Hoja de datos, Descripción, Manual

  IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
VCES = 1200V
IC = 15A, TC =100°C
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
  C 
tSC 10µs, TJ(max) = 150°C
VCE(ON) typ. = 1.7V @ IC = 10A
Applications
• Industrial Motor Drive
• UPS
• Solar Inverters
• Welding
Features
Benchmark Low VCE(ON)
10μs Short Circuit SOA
Positive VCE(ON) Temperature Coefficient
Square RBSOA and high ILM- rating
Lead-Free, RoHS compliant
G
E
n-channel
E
GC
E
GC
IRG8P15N120KDPbF  IRG8P15N120KDEPbF 
TO247AC 
TO247AD 
G
Gate
C
Collector
E
Emitter
Benefits 
High Efficiency in a Motor Drive Applications
Increases margin for short circuit protection scheme
Excellent Current Sharing in Parallel Operation
Rugged Transient Performance
Environmentally friendly
Base part number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Package Type
TO-247AC
TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRG8P15N120KDPbF
IRG8P15N120KD-EPbF
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
IF @ TC = 25°C
IF @ TC = 100°C
IFM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current (Silicon Limited)
Continuous Collector Current
Pulse Collector Current (see fig. 2)
Clamped Inductive Load Current (see fig. 3)
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Max.
1200
30
15
30
40
20
11
40
±30
125
50
-40 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter
RJC (IGBT)
RJC (Diode)
RCS
RJA
Thermal Resistance Junction-to-Case-(each IGBT)
Thermal Resistance Junction-to-Case-(each Diode)
Thermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min.
–––
–––
–––
–––
Typ.
–––
–––
0.24
40
Max.
1.0
1.7
–––
–––
Units
V
A
V
W
C
Units
°C/W
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November 4, 2014

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IRG8P15N120KD-EPbF pdf
  IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
30
VCC = 600V
28 Tj = 150°C
VGE = 15V
26 IF = 10A
24
22 RG = 
20 RG = 
RG = 
18
RG = 10
16
600 700 800 900 1000 1100 1200 1300
diF /dt (A/µs)
Fig. 12 - Typ. IRR vs. di/dt
100
1200
1100
1000
900
RG = 10
RG = 22
RG = 47
RG = 10
800
700
600
500
4
8
12
IF (A)
16
20
Fig. 13 - Typ. Diode ERR vs. IF
TJ = 150°C
10
-40°C
25°C
150°C
1
0.1
0.0 1.0 2.0 3.0 4.0 5.0 6.0
VF (V)
Fig. 14 - Typ. Diode Forward Voltage
Drop Characteristics
5 www.irf.com © 2014 International Rectifier
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November 4, 2014

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IRG8P15N120KD-EPbF arduino
  IRG8P15N120KDPbF/IRG8P15N120KD-EPbF
Qualification Information
Qualification Level  
Moisture Sensitivity Level
RoHS Compliant
TO-247AC
TO-247AD
Industrial
(per JEDEC JESD47F) ††
N/A
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
†† Applicable version of JEDEC standard at the time of product release.
11 www.irf.com
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
© 2014 International Rectifier
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November 4, 2014

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