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PDF IRG7PSH73K10PbF Data sheet ( Hoja de datos )

Número de pieza IRG7PSH73K10PbF
Descripción INSULATED GATE BIPOLAR TRANSISTOR
Fabricantes International Rectifier 
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No Preview Available ! IRG7PSH73K10PbF Hoja de datos, Descripción, Manual

INSULATED GATE BIPOLAR TRANSISTOR
Features
• Low VCE (ON) Trench IGBT Technology
• Low Switching Losses
• Maximum Junction Temperature 175 °C
• 10 μS short Circuit SOA
• Square RBSOA
• 100% of The Parts Tested for ILM
• Positive VCE (ON) Temperature Coefficient
• Tight Parameter Distribution
• Lead Free Package
Benefits
• High Efficiency in a Wide Range of Applications
• Suitable for a Wide Range of Switching Frequencies due to
Low VCE (ON) and Low Switching Losses
• Rugged Transient Performance for Increased Reliability
• Excellent Current Sharing in Parallel Operation
PD - 97406A
IRG7PSH73K10PbF
C
G
E
n-channel
VCES = 1200V
IC(Nominal) = 75A
tSC 10μs, TJ(max) =175°C
VCE(on) typ. = 2.0V
G
G ate
C
E
GC
Super-247
C
C ollector
E
E m itter
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
INOMINAL
ICM
ILM
VGE
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Nominal Current
Pulse Collector Current, VGE=15V
dClamped Inductive Load Current, VGE=20V
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
RθJC (IGBT)
RθCS
RθJA
Parameter
gThermal Resistance Junction-to-Case-(each IGBT)
gThermal Resistance, Case-to-Sink (flat, greased surface)
Thermal Resistance, Junction-to-Ambient (typical socket mount)
Max.
1200
220c
130
75
225
300
±30
1150
580
-55 to +175
300 (0.063 in. (1.6mm) from case)
10 lbf·in (1.1 N·m)
Min.
–––
–––
–––
Typ.
–––
0.24
40
Max.
0.13
–––
–––
Units
V
A
V
W
°C
Units
°C/W
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IRG7PSH73K10PbF pdf
400
TJ = 25°C
300 TJ = 175°C
IRG7PSH73K10PbF
40000
30000
EON
200
20000
EOFF
100 10000
0
4 6 8 10 12 14 16
VGE, Gate-to-Emitter Voltage(V)
Fig. 12- Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
1000
tdOFF
tF
0
40 60 80 100 120 140 160
IC (A)
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 5.0Ω; VGE = 15V
25000
20000
EON
100 tR
tdON
15000
10000
EOFF
5000
10
20 40 60 80 100 120 140 160
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L = 200μH; VCE = 600V, RG = 5.0Ω; VGE = 15V
10000
1000
tdOFF
tR
100
tdON
tF
10
0
10 20 30 40 50
RG (Ω)
Fig. 16 - Typ. Switching Time vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 75A; VGE = 15V
0
0 10 20 30 40 50
RG (Ω)
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 200μH; VCE = 600V, ICE = 75A; VGE = 15V
40 450
35 Tsc Isc 400
30 350
25 300
20 250
15 200
10 150
5
8 10 12 14 16
VGE (V)
Fig. 17 - VGE vs. Short Circuit Time
VCC = 600V; TC = 150°C
100
18
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