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PDF 1PS66SB82 Datasheet ( Hoja de datos )

Número de pieza 1PS66SB82
Descripción Schottky barrier diode
Fabricantes NXP 
Logotipo NXP Logotipo

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1PS66SB82 Hoja de datos, Descripción, Manual
1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
Rev. 04 — 13 January 2010
Product data sheet
1. Product profile
1.1 General description
Epitaxial low capacitance Schottky barrier diodes encapsulated in very small SMD plastic
packages.
Table 1. Product overview
Type number
Package
NXP
1PS66SB82
SOT666
1PS88SB82
SOT363
JEITA
-
SC-88
Configuration
triple isolated diode
triple isolated diode
1.2 Features
„ Low diode capacitance
„ Low forward voltage
„ Very small SMD plastic packages
1.3 Applications
„ Digital applications:
‹ Ultra high-speed switching
‹ Clamping circuits
„ RF applications:
‹ Diode ring mixer
‹ RF detector
‹ RF voltage doubler
1.4 Quick reference data
Table 2.
Symbol
IF
VR
Cd
Quick reference data
Parameter
Conditions
continuous forward current
continuous reverse voltage
diode capacitance
VR = 0 V;
f = 1 MHz;
see Figure 4
Min Typ Max Unit
- - 30 mA
- - 15 V
- 1 - pF

1 page

1PS66SB82 pdf
NXP Semiconductors
8. Package outline
Plastic surface-mounted package; 6 leads
1PS66SB82; 1PS88SB82
15 V, 30 mA low Cd Schottky barrier diodes
SOT666
DA
EX
S YS
65 4
HE
pin 1 index
12
e1 bp
e
3
wM A
A
detail X
c
Lp
0 1 2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT A
bp
c
D
E
e e1 HE Lp
mm
0.6 0.27 0.18 1.7
0.5 0.17 0.08 1.5
1.3
1.1
1.0
0.5
1.7
1.5
0.3
0.1
wy
0.1 0.1
OUTLINE
VERSION
SOT666
IEC
Fig 5. Package outline SOT666
1PS66SB82_1PS88SB82_4
Product data sheet
REFERENCES
JEDEC
JEITA
Rev. 04 — 13 January 2010
EUROPEAN
PROJECTION
ISSUE DATE
04-11-08
06-03-16
© NXP B.V. 2010. All rights reserved.
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