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PDF 2N7590T3 Datasheet ( Hoja de datos )

Número de pieza 2N7590T3
Descripción RADIATION HARDENED POWER MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo

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2N7590T3 Hoja de datos, Descripción, Manual
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
PD-96930C
2N7590T3
IRHYS67134CM
150V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67134CM 100K Rads (Si)
IRHYS63134CM 300K Rads (Si)
RDS(on)
0.090
0.090
ID
19A
19A
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
n ESD Rating: Class 2 per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
19
12
76
75
0.6
±20
67
19
7.5
7.8
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
For footnotes refer to the last page
www.irf.com
1
01/31/14

1 page

2N7590T3 pdf
Pre-Irradiation
IRHYS67134CM, 2N7590T3
600
ID = 19A
500
400
300
TJ = 150°C
200
100 TJ = 25°C
0
4 8 12 16 20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
24
800
700
600
500
400
300
200
100
0
0
TJ = 150°C
TJ = 25°C
VGS = 12V
20 40 60
ID, Drain Current (A)
80
Fig 6. Typical On-Resistance Vs
Drain Current
190
ID = 1.0mA
180
170
160
150
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
5.0
4.5
4.0
3.5
3.0
2.5 ID = 50µA
2.0 ID = 250µA
ID = 1.0mA
1.5 ID = 150mA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5

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