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Número de pieza | IRHYS67130CM | |
Descripción | RADIATION HARDENED POWER MOSFET | |
Fabricantes | International Rectifier | |
Logotipo | ||
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No Preview Available ! PD-96986A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
2N7588T3
IRHYS67130CM
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYS67130CM 100K Rads (Si)
IRHYS63130CM 300K Rads (Si)
RDS(on)
0.042Ω
0.042Ω
ID
20A*
20A*
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C Continuous Drain Current
ID @ VGS = 12V, TC = 100°C Continuous Drain Current
IDM Pulsed Drain Current À
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
20*
19
80
75
0.6
±20
107
20
7.5
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (0.063 in. /1.6 mm from case for 10s)
4.3 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
06/16/10
1 page Pre-Irradiation
IRHYS67130CM, 2N7588T3
280
240 ID = 20A
200
160
120
TJ = 150°C
80
TJ = 25°C
40
0
4 8 12 16 20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
24
280
240
200 TJ = 150°C
160
120
80
40
0
0
TJ = 25°C
VGS = 12V
20 40 60 80
ID, Drain Current (A)
100
Fig 6. Typical On-Resistance Vs
Drain Current
130
ID = 1.0mA
120
110
100
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
ID = 50µA
ID = 250µA
2.0 ID = 1.0mA
1.5 ID = 150mA
1.0
-60 -40 -20 0 20 40 60 80 100 120 140 160
TJ , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRHYS67130CM.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRHYS67130CM | RADIATION HARDENED POWER MOSFET | International Rectifier |
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