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PDF IRHYB67130CM Data sheet ( Hoja de datos )

Número de pieza IRHYB67130CM
Descripción RADIATION HARDENED POWER MOSFET
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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No Preview Available ! IRHYB67130CM Hoja de datos, Descripción, Manual

PD-95841A
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (Low-Ohmic TO-257AA)
IRHYB67130CM
100V, N-CHANNEL
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHYB67130CM 100K Rads (Si)
IRHYB63130CM 300K Rads (Si)
RDS(on)
0.042
0.042
ID
20A*
20A*
International Rectifier’s R6TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Low-Ohmic
TO-257AA Tabless
Features:
n Low RDS(on)
n Fast Switching
n Single Event Effect (SEE) Hardened
n Low Total Gate Charge
n Simple Drive Requirements
n Ease of Paralleling
n Hermetically Sealed
n Ceramic Eyelets
n Electrically Isolated
n Light Weight
Absolute Maximum Ratings
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
Parameter
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
Pre-Irradiation
Units
20*
19 A
80
75 W
0.6 W/°C
±20 V
107 mJ
20 A
7.5 mJ
5.5
-55 to 150
V/ns
oC
300 (0.063 in. /1.6 mm from case for 10s)
3.7 (Typical)
g
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
11/18/04

1 page




IRHYB67130CM pdf
Pre-Irradiation
IRHYB67130CM
3000
2500
2000
1500
1000
VGS = 0V, f = 1 MH1z00KHz
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
Coss = Cds + Cgd
Ciss
Coss
500
0
1
Crss
10
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100
20
ID = 20A
16
12
VDS
VDS
=
=
8500VV6
VDS = 20V
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
0 10 20 30 40 50
QG, Total Gate Charge (nC)
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
60
100
10 TJ = 150°C
1
TJ = 25°C
0.1
0.2
VGS = 0V
0.4 0.6 0.8 1.0 1.2
VSD , Source-to-Drain Voltage (V)
1.4
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
1000
100
OPERATION IN THIS AREA
LIMITED BY R DS(on)
10 100µs
1ms
1
Tc = 25°C
Tj = 150°C
Single Pulse
0.1
1 10
10ms
100
VDS , Drain-to-Source Voltage (V)
1000
Fig 8. Maximum Safe Operating Area
5

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