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PDF BLS7G3135LS-200 Data sheet ( Hoja de datos )

Número de pieza BLS7G3135LS-200
Descripción LDMOS S-band radar power transistor
Fabricantes NXP Semiconductors 
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BLS7G3135LS-200
LDMOS S-band radar power transistor
Rev. 2 — 23 September 2013
Product data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for S-band radar applications in the frequency range from
3100 MHz to 3500 MHz.
Table 1. Typical performance
Typical RF performance at Tcase = 25 C; tp = 300 s; = 10 %; IDq = 100 mA; in a class-AB
production test circuit.
Test signal
f
(GHz)
VDS
PL
Gp
D tr
tf
(V)
(W) (dB)
(%) (ns)
(ns)
pulsed RF
3.1
32 200 12
48 8
6
3.3
32 200 12
46 8
6
3.5
32 200 12
43 8
6
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Internally matched for ease of use (input and output)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
S-band radar applications in the frequency range 3100 MHz to 3500 MHz

1 page




BLS7G3135LS-200 pdf
NXP Semiconductors
BLS7G3135LS-200
LDMOS S-band radar power transistor
7.4 Graphical data

3/
:





DDD




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G%




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3L :
VDS = 32 V; IDq = 100 mA; = 10 %; tp = 300 s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 3. Output power as a function of input power;
typical values

Ș'



      
3/ :
VDS = 32 V; IDq = 100 mA; = 10 %; tp = 300 s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 4. Power gain as a function of output power;
typical values
DDD



 



      
3/ :
VDS = 32 V; IDq = 100 mA; = 10 %; tp = 300 s.
(1) f = 3100 MHz
(2) f = 3300 MHz
(3) f = 3500 MHz
Fig 5. Drain efficiency as a function of output power; typical values
BLS7G3135LS-200
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 23 September 2013
© NXP B.V. 2013. All rights reserved.
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