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PDF BLP8G21S-160PV Data sheet ( Hoja de datos )
| Número de pieza | BLP8G21S-160PV | |
| Descripción | Power LDMOS transistor | |
| Fabricantes | NXP Semiconductors | |
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BLP8G21S-160PV
Power LDMOS transistor
Rev. 3 — 1 July 2014
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS transistor for base station applications at frequencies from 1880 MHz to
2025 MHz.
Table 1. Typical performance
Typical RF performance per section at Tcase = 25 C in a common source class-AB production test
circuit.
Test signal
f
IDq
VDS PL(AV) Gp
D ACPR
(MHz)
(mA) (V) (W)
(dB) (%) (dBc)
2-carrier W-CDMA
1880 to 1920
600 28 20
17.5 31 30 [1]
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing = 5 MHz.
1.2 Features and benefits
Designed for broadband operation (1880 MHz to 2025 MHz)
Decoupling leads to enable improved video bandwidth
Excellent ruggedness
High efficiency
Excellent thermal stability
Internally matched for ease of use
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for base station and multi-carrier applications in the 1880 MHz to
2025 MHz frequency range
1 page  
NXP Semiconductors
BLP8G21S-160PV
Power LDMOS transistor
7.4 Graphical data
7.4.1 Pulsed CW
*S
G%
*S
Ș'
DDD
Ș'
5/LQ
G%
DDD
3/ :
3/ :
VDS = 28 V; IDq = 600 mA.
(1) f = 1880 MHz
(2) f = 1920 MHz
Fig 3. Power gain and drain efficiency as function of
output power; typical values per section
VDS = 28 V; IDq = 600 mA.
(1) f = 1880 MHz
(2) f = 1920 MHz
Fig 4. Input return loss as a function of output
power; typical values per section
7.4.2 CW
*S
G%
*S
Ș'
DDD
Ș'
5/LQ
G%
DDD
3/ :
3/ :
VDS = 28 V; IDq = 600 mA.
(1) f = 1880 MHz
(2) f = 1920 MHz
Fig 5. Power gain and drain efficiency as function of
output power; typical values per section
VDS = 28 V; IDq = 600 mA.
(1) f = 1880 MHz
(2) f = 1920 MHz
Fig 6. Input return loss as a function of output
power; typical values per section
BLP8G21S-160PV
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 1 July 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
5 of 11
5 Page 
NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.4.1
7.4.2
7.4.3
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics . . . . . . . . . . . . . . . . . . 2
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Ruggedness in class-AB operation . . . . . . . . . 3
Impedance information . . . . . . . . . . . . . . . . . . . 3
Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Graphical data . . . . . . . . . . . . . . . . . . . . . . . . . 5
Pulsed CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
CW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2-Carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Handling information. . . . . . . . . . . . . . . . . . . . . 8
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 8
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 9
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
BLP8G21S-160PV
Power LDMOS transistor
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 1 July 2014
Document identifier: BLP8G21S-160PV
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