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PDF 2SB1465 Datasheet ( Hoja de datos )

Número de pieza 2SB1465
Descripción PNP SILICON EPITAXIAL TRANSISTOR
Fabricantes Renesas 
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2SB1465 Hoja de datos, Descripción, Manual
DATA SHEET
DARLINGTON TRASISTOR
2SB1465
PNP SILICON EPITAXIAL TRANSISTOR
(DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SB1465 is a mold power darlington transistor developed for low-frequency power amplifier and low-speed
switching. This transistor is ideal for use in a direct drive from IC output to relay drivers in switching equipment and
pulse motor drivers or relay drivers in such as OA and FA equipments.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse) Note
Base current
Total power dissipation (TC = 25°C)
Total power dissipation (TA = 25°C)
Junction temperature
Storage temperature
VCBO
VCEO
VEBO
IC(DC)
IC(pulse)
IB(DC)
PT1
PT2
Tj
Tstg
300
300
7
300
600
30
25
2.0
150
55 to +150
V
V
V
mA
mA
mA
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
Note PW 300 μs, duty cycle 10%
Electrode Connection
1. Base (B)
2. Collector (C)
3. Emitter (E)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16130EJ2V0DS00 (2nd edition)
Date Published November 2006 NS CP(K)
Printed in Japan
2002

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