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PDF KST2222 Data sheet ( Hoja de datos )
| Número de pieza | KST2222 | |
| Descripción | General Purpose Transistor | |
| Fabricantes | Fairchild Semiconductor | |
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KST2222
General Purpose Transistor
2
NPN Epitaxial Silicon Transistor
1 SOT-23
1. Base 2. Emitter 3. Collector
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
VCES
VEBO
IC
PC
TSTG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
Storage Temperature
Value
60
30
5
600
350
150
Units
V
V
V
mA
mW
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCBO
BVCEO
BVEBO
ICEX
ICBO
hFE
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Collector Cut-off Current
DC Current Gain
VCE (sat) * Collector-Emitter Saturation Voltage
VBE (sat) * Base-Emitter Saturation Voltage
fT Current Gain Bandwidth Product
IC=10µA, IE=0
IC=10mA, IB=0
IE=10µA, IC=0
VCE=60V, VEB=3V
VCB=50V, IE=0
VCE=10V, IC=0.1mA
VCE=10V, IC=1.0mA
VCE=10V, IC=10mA
*VCE=10V, IC=150mA
*VCE=10V, IC=500mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=150mA, IB=15mA
IC=500mA, IB=50mA
IC=20mA, VCE=20V
f=100MHz
Cob Output Capacitance
tON Turn On Time
tOFF
Turn Off Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
VCB=10V, IE=0, f=1.0MHz
VCC=30V, VBE=0.5V
IC=150mA, IB1=15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
Min.
60
30
5
35
50
75
100
30
250
Max.
10
0.01
Units
V
V
V
nA
µA
300
0.4 V
1.6 V
1.3 V
2.6 V
MHz
8.0 pF
35 ns
285 ns
Marking
1B
©2000 Fairchild Semiconductor International
Rev. A, February 2000
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet KST2222.PDF ] | |
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