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PDF BLL6H1214P2S-250 Data sheet ( Hoja de datos )

Número de pieza BLL6H1214P2S-250
Descripción LDMOS L-band radar power module
Fabricantes NXP Semiconductors 
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BLL6H1214P2S-250
LDMOS L-band radar power module
Rev. 1 — 12 August 2014
Product data sheet
1. Product profile
1.1 General description
250 W LDMOS power module intended for L-band radar applications in the frequency
range from 1.2 GHz to 1.4 GHz.
Table 1. Test information
Typical RF performance at Tcase = 25 C; tp = 1.8 ms; = 30 %; IDq = 200 mA; Pi = 26 dBm; in a
class-AB production test circuit.
Test signal
f
(MHz)
VDS PL
(V) (W)
Gp add tr
tf
(dB) (%) (ns) (ns)
pulsed RF
1195 to 1405
45 190 to 290
27 48 15 5
1.2 Features and benefits
Input/output 50 matched
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1.2 GHz to 1.4 GHz)
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
L-band radar applications in the frequency range 1.2 GHz to 1.4 GHz

1 page




BLL6H1214P2S-250 pdf
NXP Semiconductors
BLL6H1214P2S-250
LDMOS L-band radar power module

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3L G%P
VDS = 45 V; IDq = 200 mA; tp = 1.8 ms; = 30 %.
(1) f = 1195 MHz
(2) f = 1300 MHz
(3) f = 1405 MHz
Fig 4. Output power as a function of input power;
typical values

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G%

DDD





 
I 0+]

VDS = 45 V; IDq = 200 mA; tp = 1.8 ms; = 30 %;
Pi = 26 dBm.
Fig 5. Drain efficiency as a function of frequency;
typical values

5/LQ
G%

DDD

 








 
I 0+]






 
I 0+]

Fig 6.
VDS = 45 V; IDq = 200 mA; tp = 1.8 ms; = 30 %;
Pi = 26 dBm.
Power gain as a function of frequency; typical
values
Fig 7.
VDS = 45 V; IDq = 200 mA; tp = 1.8 ms; = 30 %;
Pi = 26 dBm.
Input return loss as a function of frequency;
typical values
BLL6H1214P2S-250
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 12 August 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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