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PDF KMB075N75P Data sheet ( Hoja de datos )
| Número de pieza | KMB075N75P | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de KMB075N75P (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction , electronic lamp ballasts based on half bridge topology and
switching mode power supplies.
FEATURES
VDSS= 75V, ID= 75A
Drain-Source ON Resistance :
RDS(ON)=0.017 @VGS = 10V
Qg(typ.) = 85nC
Improved dv/dt capacity, high Ruggedness
Maximum Junction Temperature Range (175
)
KMB075N75P
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
E
I
K
M
D
NN
F
G
B
Q
L
J
O
C
P
H
123
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Q
MILLIMETERS
9.9 +_ 0.2
15.95 MAX
1.3+0.1/-0.05
0.8+_ 0.1
3.6 +_ 0.2
2.8+_ 0.1
3.7
0.5+0.1/-0.05
1.5
13.08+_ 0.3
1.46
1.4 +_ 0.1
1.27+_ 0.1
2.54 +_ 0.2
4.5 +_ 0.2
2.4 +_ 0.2
9.2 +_ 0.2
TO-220AB
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
ID
IDP
EAS
EAR
dv/dt
Drain Power
Dissipation
Tc=25
Derate above 25
PD
Maximum Junction Temperature
Storage Temperature Range
Tj
Tstg
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-
Ambient
RthJC
RthCS
RthJA
RATING
75
20
75
52.5
300
1350
19
7.0
190
1.27
175
-55 175
0.79
0.5
62.5
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
/W
D
G
S
2006. 4. 24
Revision No : 1
1/2
1 page  
KMB075N75P
- Gate Charge
Fast
Recovery
ID Diode
0.8 x VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs
Qgd
Qg
Q
- Single Pulsed Avalanche Energy
50V
25Ω
10 V VGS
- Resistive Load Switching
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
tp
0.5 x VDSS
25 Ω
10V VGS
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
tf
td(off)
toff
VDS(t)
Time
2006. 4. 24
Revision No : 1
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KMB075N75P.PDF ] | |
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