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PDF KMB054N45DA Data sheet ( Hoja de datos )
| Número de pieza | KMB054N45DA | |
| Descripción | N-Channel Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KMB054N45DA
N-Ch Trench MOSFET
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Back-light Inverter and Power
Supply.
FEATURES
VDSS=45V, ID=54A.
Low Drain-Source ON Resistance.
: RDS(ON)=8.5m (Max.) @ VGS=10V
: RDS(ON)=11m (Max.) @ VGS=4.5V
Super High Dense Cell Design.
High Power and Current Handling Capability.
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
123
1. GATE
2. DRAIN
3. SOURCE
MAXIMUM RATING (Ta=25 Unless otherwise Noted)
CHARACTERISTIC
SYMBOL N-Ch UNIT
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
Drain Current
DC@TC=25
Pulsed
(Note1)
(Note2)
ID
IDP
Drain-Source-Diode Forward Current
IS
@TC=25
Drain Power Dissipation
@Ta=25
(Note1)
(Note2)
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Tstg
Thermal Resistance, Junction to Case (Note1)
RthJC
Thermal Resistance, Junction to Ambient (Note2) RthJA
Note 1) RthJC means that the infinite heat sink is mounted.
Note 2) Surface Mounted on 1 1 Pad of 2 oz copper.
45
20
54
100
100
45
3.1
150
-55 150
2.8
40
V
V
A
A
W
/W
/W
DPAK (1)
Marking
Type Name
KMB
054N45
DA
Lot No
PIN CONNECTION (TOP VIEW)
D
2
2
1
G
2008. 8. 7
13
3
S
Revision No : 0
1/5
1 page  
KMB054N45DA
Fig11. Gate Charge Circuit and Wave Form
Schottky
ID Diode
0.5 VDSS
1.0 mA
VGS
ID
VDS
VGS
10 V
Qgs Qgd
Qg
Q
Fig12. Resistive Load Switching
0.5 VDSS
6Ω
10 V
VGS
RL
VDS
VDS 90%
VGS 10%
td(on)
tr
ton
td(off)
tf
toff
2008. 8. 7
Revision No : 0
5/5
5 Page | ||
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| PDF Descargar | [ Datasheet KMB054N45DA.PDF ] | |
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